ELECTRONIC COMPONENT COMPRISING A CONVERTIBLE STRUCTURE

• US 20110012082A1
• Filed: 03/18/2009
• Published: 01/20/2011
• Est. Priority Date: 03/21/2008
• Status: Abandoned Application

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: NXP B.V. (NXP Semiconductors NV)
• Inventors: Tio Castro, David
• Application Number:
  US12/933,590
• Publication Number:
  US 20110012082A1
• Time in Patent Office: Days
• US Class Current: 257/2
• CPC Class Codes: H10B 63/30 comprising selection components having three or more electrodes, e.g. transistors
• CPC Class Codes: H10N 70/043 by implantation
• CPC Class Codes: H10N 70/231 based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
• CPC Class Codes: H10N 70/823 adapted for essentially horizontal current flow, e.g. bridge type devices
• CPC Class Codes: H10N 70/826 adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
• CPC Class Codes: H10N 70/8825 Selenides, e.g. GeSe
• CPC Class Codes: H10N 70/8828 Tellurides, e.g. GeSbTe

Abstract

An electronic component (100, 1400) comprises a first electrode (106), a second electrode (107), a convertible structure (102) electrically coupled between the first electrode (106) and the second electrode (107), being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states, and a retention enhancement structure (108, 1402) arranged between the first electrode (106) and the second electrode (107), connected to the convertible structure (102) and configured for suppressing conversion between different ones of the at least two states in the absence of heating.

Claims

1. An electronic component, the electronic component comprising

a first electrode;

a second electrode;

a convertible structure electrically coupled between the first electrode and the second electrode, being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states;

a retention enhancement structure arranged between the first electrode and the second electrode, connected to the convertible structure and configured for suppressing conversion between different ones of the at least two states in the absence of heating.

2. The electronic component according to claim 1, wherein the retention enhancement structure comprises a barrier within the convertible structure configured for suppressing conversion between different ones of the at least two states in the absence of heating.

3. The electronic component according to claim 2, wherein the barrier is configured as a crystallization barrier for suppressing crystallization of the convertible structure.

4. The electronic component according to claim 1, wherein the retention enhancement structure comprises at least one of the group consisting of an electrically conductive material, an electrically isolating material, and a semiconductive material.

5. The electronic component according to claim 2, wherein the convertible structure is shaped as a line and the barrier comprises at least one layer traversing the line.

6. The electronic component according to claim 2, wherein the convertible structure is shaped as a line and the barrier comprises two layers traversing the line and delimiting an island-shaped sub-portion of the convertible structure.

7. The electronic component according to claim 2, wherein the barrier is configured for delimiting a sub-portion of the convertible structure;

wherein the electronic component comprises a control unit adapted for applying an electric signal to the convertible structure to selectively convert the entire delimited sub-portion of the convertible structure into one of the at least two states.

8. The electronic component according to claim 1, wherein one of the retention enhancement structure and the convertible structure comprises a material section being modified as compared to the other one of the retention enhancement structure and the convertible structure for suppressing conversion between different ones of the at least two states in the absence of heating.

9. The electronic component according to claim 8, wherein the material section comprises one of the group consisting of chemically modified material, doped material, material being modified by implantation, and material having a modified lattice constant.

10. The electronic component according to claim 8, wherein the retention enhancement structure is embedded between at least one of the first electrode and the second electrode on the one hand and the convertible structure on the other hand.

11. The electronic component according to claim 8, wherein the convertible structure and the retention enhancement structure form a line, wherein the retention enhancement structure forms two end sections of the line each of which being sandwiched between one of the first electrode and the second electrode on the one hand and the centrally arranged convertible structure on the other hand.

12. The electronic component according to claim 8, wherein a thermal conductivity of the convertible structure is lower than a thermal conductivity of the retention enhancement structure.

13. The electronic component according to claim 1, wherein the retention enhancement structure and the convertible structure are arranged relative to one another so that the electronic component is free of an interface between crystalline and amorphous material of the convertible structure in the absence of a programming electric signal.

14. The electronic component according to claim 1, adapted as one of the group consisting of a horizontal cell, a vertical cell, and an Ovonic cell.

15. The electronic component according to claim 1, wherein the convertible structure is a thermo-dependent structure, particularly a phase change structure that is convertible between at least two phase states.

16. The electronic component according to claim 1, wherein the convertible structure is a phase change structure of the fast growth type.

17. The electronic component according to claim 1, wherein the convertible structure is electrically conductive in at least one in the at least two states.

18. The electronic component according to claim 1, comprising an electric sensing circuit adapted for sensing the different electrical properties of the convertible structure in different ones of the at least two states.

19. The electronic component according to claim 1, wherein the convertible structure is adapted such that a value of the electrical conductivity differs between the at least two states.

20. The electronic component according to claim 1, wherein the convertible structure is adapted such that one of the at least two states relates to a crystalline phase of the convertible structure.

21. The electronic component according to claim 1, comprising a switch, particularly one of the group consisting of a transistor, a field effect transistor, a bipolar transistor, a FinFet, and a diode, electrically coupled to the convertible structure.

22. The electronic component according to claim 1, adapted as one of the group consisting of a memory device, a memory array, an actuator, a micro-electromechanical structure, a controller, and a switch.

23. The electronic component according to claim 1, wherein the retention enhancement structure is adapted to separate the convertible structure into at least two separate islands.

24. A method of manufacturing an electronic component, the method comprising

electrically coupling a convertible structure between a first electrode and a second electrode, the convertible structure being convertible between at least two states by heating and having different electrical properties in different ones of the at least two states;

forming a retention enhancement structure between the first electrode and the second electrode, connected to the convertible structure and configured for suppressing conversion between different ones of the at least two states in the absence of heating.

25. The method according to claim 24, wherein the forming comprises forming a barrier as the retention enhancement structure within the convertible structure configured for suppressing conversion between different ones of the at least two states in the absence of heating.

26. The method according to claim 24, wherein the forming comprises converting a material section of the convertible structure into the retention enhancement structure for suppressing conversion between different ones of the at least two states in the absence of heating.

27. The method according to claim 24, wherein the convertible structure is formed by converting a material section of the retention enhancement structure for suppressing conversion between different ones of the at least two states in the absence of heating into the convertible structure.

28. The method according to claim 24, wherein after forming one of the retention enhancement structure and the convertible structure, a material section thereof is converted into the other one of the retention enhancement structure and the convertible structure by implanting a substance using a mask.