OPTOELECTRONIC SEMICONDUCTOR BODY WITH A TUNNEL JUNCTION AND METHOD FOR PRODUCING SUCH A SEMICONDUCTOR BODY
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Abstract
An optoelectronic semiconductor body includes an epitaxial semiconductor layer sequence including a tunnel junction including an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation.
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Citations
35 Claims
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1-15. -15. (canceled)
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16. An optoelectronic semiconductor body comprising an epitaxial semiconductor layer sequence comprising:
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a tunnel junction comprising an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer has an n-barrier layer facing the n-type tunnel junction layer, a p-barrier layer facing the p-type tunnel junction layer, and a middle layer with a material composition differing from material compositions of the n-barrier layer and the p-barrier layer; and an active layer that emits electromagnetic radiation. - View Dependent Claims (17, 18, 19, 20, 22, 26, 31, 32, 33, 34, 35)
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21. An optoelectronic semiconductor body comprising an epitaxial semiconductor layer sequence comprising:
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a tunnel junction comprising an intermediate layer between an n-type tunnel junction layer and a p-type tunnel junction layer, wherein the intermediate layer is provided with imperfections in a targeted manner; and an active layer that emits electromagnetic radiation. - View Dependent Claims (23, 24, 25)
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27. A method for producing an optoelectronic semiconductor body comprising an epitaxial semiconductor layer sequence comprising a tunnel junction comprising an n-type tunnel junction layer, an intermediate layer and a p-type tunnel junction layer;
- and an active layer that emits electromagnetic radiation, comprising;
producing the intermediate layer by epitaxially depositing a semiconductor material; and providing imperfections in the intermediate layer in a targeted manner in selected locations. - View Dependent Claims (28, 29, 30)
- and an active layer that emits electromagnetic radiation, comprising;
Specification