SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
1. A semiconductor device comprising:
- a driver circuit comprising a first transistor and a pixel portion comprising a second transistor over a substrate;
the first transistor comprising;
a first gate electrode layer over the substrate;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer comprising a first channel formation region over the first gate electrode layer with the gate insulating layer interposed therebetween;
a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; and
an oxide insulating layer over the first source electrode layer and the first drain electrode layer;
the second transistor comprising;
a second gate electrode layer over the substrate;
the gate insulating layer over the second gate electrode layer;
a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer interposed therebetween;
a channel protective layer over the second gate electrode layer with the second oxide semiconductor layer interposed therebetween; and
a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer,wherein the oxide insulating layer is in contact with the first channel formation region, andwherein each of the second gate electrode layer, the gate insulating layer, the second oxide semiconductor layer, the channel protective layer, the second source electrode layer, and the second drain electrode layer has a light-transmitting property.
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Accused Products
Abstract
A semiconductor device is provided in which a pixel portion and a driver circuit each including a thin film transistor are provided over one substrate; the thin film transistor in the pixel portion includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer having an end region with a small thickness, an oxide insulating layer in contact with part of the oxide semiconductor layer, source and drain electrode layers, and a pixel electrode layer; the thin film transistor in the pixel portion has a light-transmitting property; and source and drain electrode layers of the thin film transistor in the driver circuit portion are formed using a conductive material having lower resistance than a material of the source and drain electrode layer in the pixel portion.
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Citations
42 Claims
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1. A semiconductor device comprising:
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a driver circuit comprising a first transistor and a pixel portion comprising a second transistor over a substrate; the first transistor comprising; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer comprising a first channel formation region over the first gate electrode layer with the gate insulating layer interposed therebetween; a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; and an oxide insulating layer over the first source electrode layer and the first drain electrode layer; the second transistor comprising; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer interposed therebetween; a channel protective layer over the second gate electrode layer with the second oxide semiconductor layer interposed therebetween; and a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer, wherein the oxide insulating layer is in contact with the first channel formation region, and wherein each of the second gate electrode layer, the gate insulating layer, the second oxide semiconductor layer, the channel protective layer, the second source electrode layer, and the second drain electrode layer has a light-transmitting property. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A semiconductor device comprising:
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a driver circuit comprising a first transistor and a pixel portion comprising a second transistor over a substrate; the first transistor comprising; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the first gate electrode layer with the gate insulating layer interposed therebetween; a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer; and an oxide insulating layer over the first source electrode layer and the first drain electrode layer; the second transistor comprising; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer interposed therebetween; a channel protective layer over the second gate electrode layer with the second oxide semiconductor layer interposed therebetween; and a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer, wherein the first oxide semiconductor layer comprises a pair of first high-resistance drain regions and a first channel formation region provided between the pair of first high-resistance drain regions, wherein the oxide insulating layer is in contact with the first channel formation region, and wherein each of the second gate electrode layer, the gate insulating layer, the second oxide semiconductor layer, the channel protective layer, the second source electrode layer, and the second drain electrode layer has a light-transmitting property. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
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25. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode layer and a second gate electrode layer over a substrate; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; performing first heat treatment in order to decrease a hydrogen concentration in the oxide semiconductor film; forming an oxide conductive film over the oxide semiconductor film after performing the first heat treatment; forming a first conductive film over the oxide conductive film; patterning the oxide semiconductor film, the oxide conductive film and the first conductive film to form a first oxide semiconductor layer over the first gate electrode layer with the gate insulating layer interposed therebetween, a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer interposed therebetween, a pair of low-resistance drain regions over the first oxide semiconductor layer, a first source electrode layer and a first drain electrode layer over the pair of low-resistance drain regions; forming an oxide insulating layer over the first source electrode layer, the first drain electrode layer, and the second oxide semiconductor layer so as to be in contact with the second oxide semiconductor layer and a first channel formation region of the first oxide semiconductor layer which is provided between the first source electrode layer and the first drain electrode layer; performing second heat treatment after forming the oxide insulating layer; forming a channel protective layer over the second gate electrode layer with the second oxide semiconductor layer interposed therebetween by patterning the oxide insulating layer after performing the second heat treatment; and forming a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer so that each of the second source electrode layer and the second drain electrode layer partly overlaps with the channel protective layer. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode layer and a second gate electrode layer over a substrate; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; performing first heat treatment in order to decrease a hydrogen concentration in the oxide semiconductor film; performing second heat treatment for the oxide semiconductor film after performing the first heat treatment; forming an oxide conductive film over the oxide semiconductor film after performing the second heat treatment; forming a first conductive film over the oxide conductive film; patterning the oxide semiconductor film, the oxide conductive film, and the first conductive film to form a first oxide semiconductor layer over the first gate electrode layer with the gate insulating layer interposed therebetween, a second oxide semiconductor layer over the second gate electrode layer with the gate insulating layer interposed therebetween, a pair of low-resistance drain regions over the first oxide semiconductor layer, a first source electrode layer and a first drain electrode layer over the pair of low-resistance drain regions; forming an oxide insulating layer so as to be in contact with the second oxide semiconductor layer and a first channel formation region of the first oxide semiconductor layer which is provided between the first source electrode layer and the first drain electrode layer; performing third heat treatment after forming the oxide insulating layer; forming a channel protective layer over the second gate electrode layer with the second oxide semiconductor layer interposed therebetween by patterning the oxide insulating layer after performing the third heat treatment; and forming a second source electrode layer and a second drain electrode layer over the second oxide semiconductor layer so that each of the second source electrode layer and the second drain electrode layer partly overlaps with the channel protective layer, wherein the second heat treatment is performed in an oxygen atmosphere, an N2O gas atmosphere or ultra-dry air. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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Specification