SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a pixel portion including a first transistor over a substrate,a driver circuit including a second transistor over the substrate;
wherein the first transistor comprising;
a first gate electrode over the substrate;
a gate insulating layer over the first gate electrode;
a first oxide semiconductor layer over the gate insulating layer;
a first channel protective layer over and in contact with a part of the first oxide semiconductor layer;
a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer; and
a pixel electrode electrically connected to the first channel protective layer,wherein the second transistor comprising;
a second gate electrode over the substrate;
the gate insulating layer over the second gate electrode;
a second oxide semiconductor layer over the gate insulating layer;
a second channel protective layer over and in contact with a part of the second oxide semiconductor layer; and
a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer,wherein the first gate electrode, the gate insulating layer, the first oxide semiconductor layer, the first source electrode, the first drain electrode, the first channel protective layer, and the pixel electrode have a light-transmitting property,wherein a first material included in the first source electrode and the first drain electrode is different from a second material included in the second source electrode and the second drain electrode, andwherein a resistivity of the second material is lower than a resistivity of the first material.
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Accused Products
Abstract
An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor.
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Citations
25 Claims
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1. A semiconductor device comprising:
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a pixel portion including a first transistor over a substrate, a driver circuit including a second transistor over the substrate; wherein the first transistor comprising; a first gate electrode over the substrate; a gate insulating layer over the first gate electrode; a first oxide semiconductor layer over the gate insulating layer; a first channel protective layer over and in contact with a part of the first oxide semiconductor layer; a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer; and a pixel electrode electrically connected to the first channel protective layer, wherein the second transistor comprising; a second gate electrode over the substrate; the gate insulating layer over the second gate electrode; a second oxide semiconductor layer over the gate insulating layer; a second channel protective layer over and in contact with a part of the second oxide semiconductor layer; and a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer, wherein the first gate electrode, the gate insulating layer, the first oxide semiconductor layer, the first source electrode, the first drain electrode, the first channel protective layer, and the pixel electrode have a light-transmitting property, wherein a first material included in the first source electrode and the first drain electrode is different from a second material included in the second source electrode and the second drain electrode, and wherein a resistivity of the second material is lower than a resistivity of the first material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode over a pixel portion of a substrate; forming a second gate electrode over a driver circuit portion of the substrate; forming a gate insulating layer over the first gate electrode and the second gate electrode; forming a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating layer; performing dehydration or dehydrogenation of the first oxide semiconductor layer and the second oxide semiconductor layer by a heat treatment; forming a first channel protective layer over the first oxide semiconductor layer; forming a second channel protective layer over the second oxide semiconductor layer; forming a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer; forming a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer; and forming a pixel electrode electrically connected to the first oxide semiconductor layer, wherein the first gate electrode, the gate insulating layer, the first oxide semiconductor layer, the first source electrode, the first drain electrode, the first channel protective layer, and the pixel electrode have a light-transmitting property. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17)
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18. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode over a pixel portion of a substrate; forming a second gate electrode over a driver circuit portion of the substrate; forming a gate insulating layer over the first gate electrode and the second gate electrode; forming a first oxide semiconductor layer and a second oxide semiconductor layer over the gate insulating layer; performing dehydration or dehydrogenation of the first oxide semiconductor layer and the second oxide semiconductor layer by heat treatment; forming a first channel protective layer over the first oxide semiconductor layer; forming a second channel protective layer over the second oxide semiconductor layer; forming a first source electrode and a first drain electrode over the first channel protective layer and the first oxide semiconductor layer; and forming a second source electrode and a second drain electrode over the second channel protective layer and the second oxide semiconductor layer; wherein the first gate electrode, the gate insulating layer, the first oxide semiconductor layer, the first source electrode, the first drain electrode, and the first channel protective layer have a light-transmitting property. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25)
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Specification