STRUCTURE OF AC LIGHT-EMITTING DIODE DIES
First Claim
1. An arrangement of light emitting diodes, comprising:
- a substrate; and
four adjoining light-emitting units on said substrate, each unit comprising at least one micro-die, each micro-die comprising a lower semiconductor layer of first conductivity on said substrate, an upper semiconductor layer of second conductivity on said lower semiconductor layer, and two connecting portions on the lower semiconductor layer and the upper semiconductor layer respectively;
wherein the four adjoining light-emitting units comprise a first group of connecting portions comprising four connecting portions disposed substantially at the center of the four adjoining light-emitting units, and a second group of connecting portions comprising another four connecting portions disposed substantially at the periphery of the four adjoining light-emitting units.
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Accused Products
Abstract
A structure of light-emitting diode (LED) dies having an AC loop (a structure of AC LED dies), which is formed with at least one unit of AC LED micro-dies disposed on a chip. The unit of AC LED micro-dies comprises two LED micro-dies arranged in mutually reverse orientations and connected with each other in parallel, to which an AC power supply may be applied so that the LED unit may continuously emit light in response to a positive-half wave voltage and a negative-half wave voltage in the AC power supply. Since each AC LED micro-die is operated forwardly, the structure of AC LED dies also provides protection from electrical static charge (ESD) and may operate under a high voltage.
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Citations
10 Claims
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1. An arrangement of light emitting diodes, comprising:
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a substrate; and four adjoining light-emitting units on said substrate, each unit comprising at least one micro-die, each micro-die comprising a lower semiconductor layer of first conductivity on said substrate, an upper semiconductor layer of second conductivity on said lower semiconductor layer, and two connecting portions on the lower semiconductor layer and the upper semiconductor layer respectively; wherein the four adjoining light-emitting units comprise a first group of connecting portions comprising four connecting portions disposed substantially at the center of the four adjoining light-emitting units, and a second group of connecting portions comprising another four connecting portions disposed substantially at the periphery of the four adjoining light-emitting units. - View Dependent Claims (2, 3, 4, 5)
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6. An arrangement of light emitting diodes, comprising:
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a substrate; and four micro-dies on said substrate, each micro-die comprising a lower semiconductor layer of first conductivity on said substrate, an upper semiconductor layer of second conductivity on said lower semiconductor layer, two connecting portions on the lower semiconductor layer and the upper semiconductor layer respectively; wherein the four micro-dies comprise a first group of connecting portions comprising four connecting portions disposed substantially at the center of the four micro-dies, and a second group of connecting portions comprising another four connecting portions disposed substantially at four corners of the four micro-dies respectively. - View Dependent Claims (7)
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8. An arrangement of light emitting diodes, comprising:
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a substrate; at least two serial arrays formed on said substrate connected in anti-parallel; each array having a plurality of light emitting diodes connected serially; and each light emitting diode comprising a lower semiconductor layer of first conductivity on said substrate, an upper semiconductor layer of second conductivity on said lower semiconductor layer, a lower connecting portion on the lower semiconductor layer and an upper connecting portion on the upper semiconductor layer, said upper and lower connecting portions being disposed on diagonally opposite corners. - View Dependent Claims (9)
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10. A structure of light-emitting diode, comprising:
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a substrate; four micro-dies positioned on said substrate; and a crossing surrounded by said four micro-dies; wherein each of said four micro-dies comprises a lower semiconductor layer, an upper semiconductor layer, an anode, and a cathode; wherein either said anode or said cathode is nearby said crossing.
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Specification