Semiconductor Optoelectronics Structure with Increased Light Extraction Efficiency and Fabrication Method Thereof
First Claim
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1. A semiconductor optoelectronic structure with increased light extraction efficiency, comprising:
- a substrate;
a buffer layer formed on the substrate, comprising a pattern having plural grooves formed adjacent to the substrate;
a semiconductor layer formed on the buffer layer, comprising;
an n-type conductive layer formed on the buffer layer;
an active layer formed on the n-type conductive layer; and
a p-type conductive layer formed on the active layer;
a transparent electrically conductive layer formed on the semiconductor layer;
a p-type electrode formed on the transparent electrically conductive layer; and
an n-type electrode formed on the n-type conductive layer.
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Abstract
A semiconductor optoelectronic structure with increased light extraction efficiency and a fabrication method thereof are presented. The semiconductor optoelectronic structure includes continuous grooves formed under an active layer of the semiconductor optoelectronic structure to reflect light from the active layer and thereby direct more light through a light output surface so as to increase the light intensity from the semiconductor optoelectronic structure.
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Citations
20 Claims
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1. A semiconductor optoelectronic structure with increased light extraction efficiency, comprising:
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a substrate; a buffer layer formed on the substrate, comprising a pattern having plural grooves formed adjacent to the substrate; a semiconductor layer formed on the buffer layer, comprising; an n-type conductive layer formed on the buffer layer; an active layer formed on the n-type conductive layer; and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer formed on the semiconductor layer; a p-type electrode formed on the transparent electrically conductive layer; and an n-type electrode formed on the n-type conductive layer. - View Dependent Claims (2, 3, 4)
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5. A semiconductor optoelectronic structure with increased light extraction efficiency, comprising:
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a substrate; a buffer layer formed on the substrate, comprising a groove pattern having plural grooves formed therein; a semiconductor layer formed on the buffer layer, comprising; an n-type conductive layer formed on the buffer layer; an active layer formed on the n-type conductive layer; and a p-type conductive layer formed on the active layer; a transparent electrically conductive layer formed on the semiconductor layer; a p-type electrode formed on the transparent electrically conductive layer; and an n-type electrode formed on the n-type conductive layer. - View Dependent Claims (6, 7, 8)
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9. A method for fabricating a semiconductor optoelectronic device with increased light extraction efficiency, comprising the steps of:
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providing a substrate; forming a patterned silicon dioxide layer on the substrate; forming an upper buffer layer on the patterned silicon dioxide layer; forming a semiconductor layer on the upper buffer layer; removing the patterned silicon dioxide layer to form a groove pattern layer having a plurality of grooves; etching the semiconductor layer to form a cutting region; and forming a transparent electrically conductive layer on the semiconductor layer. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification