SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

• US 20110012218A1
• Filed: 09/28/2010
• Published: 01/20/2011
• Est. Priority Date: 04/27/2007
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: MONMA, Yohei, NISHI, Kazuo, SUGAWARA, Yuusuke, TAKAHASHI, Hidekazu, YAMADA, Daiki
• Granted Patent: US 8,138,589 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 27/14618 Containers
• CPC Class Codes: H01L 27/14683 Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof not peculiar thereto H01L21/00
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/07811 Extrinsic, i.e. with electrical conductive fillers
• CPC Class Codes: H01L 31/0203 Containers; Encapsulations , e.g. encapsulation of photodiodesfor photovoltaic devices H01L31/048; for organic photosensitive devices H10K30/80

Abstract

In fabrication of a semiconductor device mounted on a wiring board, a semiconductor circuit portion is formed over a glass substrate. Then, an interposer having connection terminals are bonded to the semiconductor circuit portion. After that, the glass substrate is peeled off from the semiconductor circuit portion, and a mold resin is poured to cover the periphery of the semiconductor circuit portion from a direction of the separation plane. Then, the mold resin is heated under predetermined conditions to be hardened.

Claims

1. A semiconductor device comprising:

an interposer;

a connection terminal formed to penetrate the interposer;

a semiconductor circuit including an electrode terminal, the semiconductor circuit being attached to the connection terminal with an anisotropic conductive adhesive interposed therebetween, wherein the electrode terminal and the connection terminal are electrically connected to each other through the anisotropic conductive adhesive; and

a resin layer covering the semiconductor circuit so that the semiconductor circuit is interposed between the resin layer and the interposer,

wherein the resin layer covers side surfaces of the semiconductor circuit.

2. The semiconductor device according to claim 1, wherein the semiconductor circuit includes an optical sensor for detecting light.

3. The semiconductor device according to claim 2, wherein the optical sensor includes a color filter.

4. A semiconductor device comprising:

an interposer;

a connection terminal formed to penetrate the interposer;

a semiconductor circuit including an electrode terminal, the semiconductor circuit being attached to the connection terminal with an adhesive interposed therebetween so that the electrode terminal and the connection terminal are in contact with each other; and

a resin layer covering the semiconductor circuit so that the semiconductor circuit is interposed between the resin layer and the interposer,

wherein the resin layer covers side surfaces of the semiconductor circuit.

5. The semiconductor device according to claim 4, wherein the semiconductor circuit includes an optical sensor for detecting light.

6. The semiconductor device according to claim 5, wherein the optical sensor includes a color filter.

7. A semiconductor device comprising:

a semiconductor element;

an electrode electrically connected to the semiconductor element;

an interposer attached to the electrode with an adhesive layer including conductive particles; and

a connection terminal disposed on the interposer so as to penetrate through the interposer and electrically contact the electrode through at least one of the conductive particles.

8. The semiconductor device according to claim 7 wherein the semiconductor element includes a thin film transistor.

9. The semiconductor device according to claim 7 further comprising a resin layer, wherein the semiconductor element is disposed between the resin layer and the interposer.

10. A semiconductor device comprising:

a first semiconductor element;

a first electrode electrically connected to the first semiconductor element;

a second semiconductor element operationally connected to the first semiconductor element;

a second electrode electrically connected to the second semiconductor element;

an interposer attached to the first electrode and the second electrode with an adhesive layer including conductive particles; and

a first connection terminal disposed on the interposer so as to penetrate through the interposer and electrically contact the first electrode through at least one of the conductive particles; and

a second connection terminal disposed on the interposer so as to penetrate through the interposer and electrically contact the second electrode through at least one of the conductive particles.

11. The semiconductor device according to claim 10 wherein the first semiconductor element includes an optical sensor and the second semiconductor element includes an amplifier circuit.

12. The semiconductor device according to claim 10 wherein the first semiconductor element includes a first thin film transistor.

13. The semiconductor device according to claim 10 further comprising a resin layer, wherein the first and second semiconductor elements are disposed between the resin layer and the interposer.