SOCKET TYPE MEMS BONDING

• US 20110012247A1
• Filed: 08/06/2009
• Published: 01/20/2011
• Est. Priority Date: 07/15/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Wu, Ting-Hau
• Granted Patent: US 8,710,638 B2
• Time in Patent Office: Days
• US Class Current: 257/678
• CPC Class Codes: B81C 1/00269 Bonding of solid lids or wafers to the substrate
• CPC Class Codes: B81C 2201/019 Bonding or gluing multiple substrate layers
• CPC Class Codes: B81C 2203/0109 Bonding an individual cap on the substrate
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

A method for fabricating an integrated circuit device is disclosed. The method includes providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate.

Claims

1. A method comprising:

providing a first substrate;

bonding a second substrate to the first substrate, the second substrate including a microeelectromechanical system (MEMS) device; and

bonding a third substrate to the first substrate.

2. The method of claim 1 wherein bonding the second substrate to the first substrate comprises performing a fusion bonding process or a eutectic bonding process.

3. The method of claim 1 wherein bonding the third substrate to the first substrate comprises performing a fusion bonding process or a eutectic bonding process.

4. The method of claim 1 wherein bonding the third substrate to the first substrate comprises extending a portion of the third substrate through the second substrate.

5. The method of claim 1 wherein extending the portion of the third substrate through the second substrate comprises:

forming a socket in the second substrate, wherein a portion of the first substrate is exposed;

forming a stand-off structure in the third substrate; and

aligning the stand-off structure with the socket structure so that the stand-off structure contacts the exposed portion of the first substrate.

6. The method of claim 5 wherein forming the stand-off structure in the third substrate comprises forming a stand-off structure length slightly larger than a socket length and a stand-off structure width slightly smaller than a socket width.

7. The method of claim 5 wherein forming the socket in the substrate comprises patterning the MEMS device and the socket with a same mask.

8. The method of claim 5 wherein forming the stand-off structure in the third substrate comprises utilizing a single mask.

9. A method comprising:

providing a first, second, and third substrate;

bonding the second substrate to the first substrate;

patterning the second substrate to form a MEMS device and a cavity extending through the second substrate to expose a portion of the first substrate;

patterning the third substrate to form a stand-off portion; and

bonding the third substrate to the first substrate by bringing the stand-off portion in contact with the exposed portion of the first substrate through the cavity.

10. The method of claim 9 wherein patterning the second substrate to form the cavity and patterning the third substrate to form the stand-off portion comprises allowing for a space between a wall of the cavity and a wall of the stand-off structure when the stand-off portion contacts the exposed portion of the first substrate through the cavity.

11. The method of claim 9 wherein bonding the second substrate to the first substrate comprises forming a fusion bond and bonding the third substrate to the first substrate comprises forming a eutectic bonding.

12. A device comprising:

a first substrate;

a second substrate including a MEMS device bonded to the first substrate;

at least one cavity extending through the second substrate; and

a third substrate over the second substrate, wherein a stand-off portion of the third substrate extends through the at least one cavity of the second substrate to bond a portion of the first substrate.

13. The device of claim 12 wherein the second substrate is bonded to the first substrate or the stand-off portion of the third substrate bonds the portion of the first substrate by a fusion bond.

14. The device of claim 13 wherein the fusion bond comprises oxide/silicon bonding or silicon/silicon bonding.

15. The device of claim 12 wherein the second substrate is bonded to the first substrate or the stand-off portion of the third substrate bonds the portion of the first substrate by a eutectic bond.

16. The device of claim 15 wherein the eutectic bond comprises metal/metal bonding or metal/semiconductor bonding.

17. A device comprising:

a substrate;

one or more MEMS structures bonded to the substrate;

a capping structure over the one or more MEMS structures, wherein the capping structure is bonded to the substrate and encloses the one or more MEMS structures between the capping structure and the substrate.

18. The device of claim 17 wherein the capping structure is bonded to the substrate by a stand-off portion of the capping structure extending through at least one of the one or more MEMS structures to contact the substrate.

19. The device of claim 17 wherein each of the one or MEMS structures is bonded to the substrate by either a fusion bond or a eutectic bond.

20. The device of claim 17 wherein the capping structure is bonded to the substrate by either a fusion bond or a eutectic bond.

21. The device of claim 17 wherein the one or more MEMS structure comprise at least one lower MEMS structure, wherein the capping structure and some of the MEMS structures have a portion that extends through the lower MEMS structure to contact the substrate.