SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a substrate having a plurality of line conductors which penetrate the substrate from a top surface of the substrate to a bottom surface of the substrate;
a semiconductor chip secured in a semiconductor-chip accommodating hole of the substrate;
a first insulating layer formed on the top surface of the substrate and on a top surface of the semiconductor chip;
a first wiring layer formed on the first insulating layer, the first wiring layer in a first through hole of the first insulating layer being electrically connected to the semiconductor chip, and the first wiring layer in a second through hole of the first insulating layer being electrically connected to some of the plurality of line conductors exposed to the second through hole of the first insulating layer;
a second insulating layer formed on the bottom surface of the substrate and on a bottom surface of the semiconductor chip; and
a second wiring layer formed on the second insulating layer, the second wiring layer in a through hole of the second insulating layer being electrically connected to some of the plurality of line conductors exposed to the through hole of the second insulating layer.
1 Assignment
0 Petitions
Accused Products
Abstract
In a semiconductor device, a substrate includes a plurality of line conductors which penetrate the substrate from a top surface to a bottom surface of the substrate. A semiconductor chip is secured in a hole of the substrate. A first insulating layer is formed on the top surfaces of the substrate and the semiconductor chip. A first wiring layer is formed on the first insulating layer and electrically connected via through holes of the first insulating layer to the semiconductor chip and some line conductors exposed to one of the through holes. A second insulating layer is formed on the bottom surfaces of the substrate and the semiconductor chip. A second wiring layer is formed on the second insulating layer and electrically connected via a through hole of the second insulating layer to some line conductors exposed to the through hole.
-
Citations
10 Claims
-
1. A semiconductor device comprising:
-
a substrate having a plurality of line conductors which penetrate the substrate from a top surface of the substrate to a bottom surface of the substrate; a semiconductor chip secured in a semiconductor-chip accommodating hole of the substrate; a first insulating layer formed on the top surface of the substrate and on a top surface of the semiconductor chip; a first wiring layer formed on the first insulating layer, the first wiring layer in a first through hole of the first insulating layer being electrically connected to the semiconductor chip, and the first wiring layer in a second through hole of the first insulating layer being electrically connected to some of the plurality of line conductors exposed to the second through hole of the first insulating layer; a second insulating layer formed on the bottom surface of the substrate and on a bottom surface of the semiconductor chip; and a second wiring layer formed on the second insulating layer, the second wiring layer in a through hole of the second insulating layer being electrically connected to some of the plurality of line conductors exposed to the through hole of the second insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
-
-
10. A method of manufacturing a semiconductor device, comprising:
-
preparing a substrate including a plurality of line conductors which penetrate the substrate from a top surface of the substrate to a bottom surface of the substrate; forming a semiconductor-chip accommodating hole in the substrate; forming a first insulating layer on a top surface of the substrate to block an end of the semiconductor-chip accommodating hole; securing a semiconductor chip in the semiconductor-chip accommodating hole so that a top surface of the semiconductor chip is in contact with the first insulating layer; forming a first wiring layer on the first insulating layer, the first wiring layer in a first through hole of the first insulating layer being electrically connected to the semiconductor chip, and the first wiring layer in a second through hole of the first insulating layer being electrically connected to some of the plurality of line conductors exposed to the second through hole of the first insulating layer; forming a second insulating layer on a bottom surface of the substrate to block the other end of the semiconductor-chip accommodating hole; and forming a second wiring layer on the second insulating layer, the second wiring layer in a through hole of the second insulating layer being electrically connected to some of the plurality of line conductors exposed to the through hole of the second insulating layer.
-
Specification