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METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20110014745A1
  • Filed: 07/13/2010
  • Published: 01/20/2011
  • Est. Priority Date: 07/17/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:

  • forming a first oxide semiconductor film over a substrate having an insulating surface; and

    irradiating the first oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −

    60°

    C. or lower to give energy to a polar molecule included in the first oxide semiconductor film, so that the polar molecule is evaporated.

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