METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A method of manufacturing a semiconductor device, the method comprising the steps of:
- forming a first oxide semiconductor film over a substrate having an insulating surface; and
irradiating the first oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −
60°
C. or lower to give energy to a polar molecule included in the first oxide semiconductor film, so that the polar molecule is evaporated.
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Accused Products
Abstract
An object is to provide a method for manufacturing a highly reliable semiconductor device including a transistor with stable electric characteristics. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with an electromagnetic wave such as a microwave or a high frequency; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the electromagnetic wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode.
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Citations
32 Claims
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1. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a first oxide semiconductor film over a substrate having an insulating surface; and irradiating the first oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −
60°
C. or lower to give energy to a polar molecule included in the first oxide semiconductor film, so that the polar molecule is evaporated. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a first oxide semiconductor film over a substrate having an insulating surface; and irradiating the first oxide semiconductor film with a high frequency wave having a frequency greater than or equal to 1 MHz and less than or equal to 300 MHz under an inert gas atmosphere or reduced pressure, or in air where a dew point under atmospheric pressure is −
60°
C. or lower to give energy to a polar molecule included in the first oxide semiconductor film, so that the polar molecule is evaporated. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with a microwave having a frequency greater than or equal to 300 MHz and less than or equal to 3 THz; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the microwave wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode. - View Dependent Claims (17, 18, 19, 20, 21, 22, 23, 24)
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25. A method of manufacturing a semiconductor device, the method comprising the steps of:
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forming a gate electrode over a substrate having an insulating surface; forming a gate insulating film over the gate electrode; forming an oxide semiconductor film over the gate insulating film; irradiating the oxide semiconductor film with a high frequency wave having a frequency greater than or equal to 1 MHz and less than or equal to 300 MHz; forming a source electrode and a drain electrode over the oxide semiconductor film irradiated with the high frequency wave; and forming an oxide insulating film, which is in contact with part of the oxide semiconductor film, over the gate insulating film, the oxide semiconductor film, the source electrode, and the drain electrode. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
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Specification