CAP AND SUBSTRATE ELECTRICAL CONNECTION AT WAFER LEVEL

• US 20110014750A1
• Filed: 07/15/2009
• Published: 01/20/2011
• Est. Priority Date: 07/15/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Peng, Jung-Huei
• Granted Patent: US 8,609,466 B2
• Time in Patent Office: Days
• US Class Current: 438/121
• CPC Class Codes: B81B 2207/096 through the substrate
• CPC Class Codes: B81B 3/0021 Transducers for transforming electrical into mechanical energy or vice versa dynamo-electric machines H02K99/00; electrostatic machines H02N1/00; piezoelectric devices H10N30/00
• CPC Class Codes: B81B 7/0064 for protecting against electromagnetic or electrostatic interferences
• CPC Class Codes: B81B 7/007 Interconnections between the MEMS and external electrical signals
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer

Abstract

A cap and substrate having an electrical connection at a wafer level includes providing a substrate and forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate. An electrically conductive path to the ground structure is formed in the substrate. A top cap is then provided, wherein the top cap includes an electrically conductive surface. The top cap is bonded to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

Claims

1. A method comprising:

providing a substrate;

forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate;

forming an electrically conductive path to the ground structure in the substrate;

providing a top cap, wherein the top cap includes an electrically conductive surface; and

bonding the top cap to the substrate so that the electrically conductive surface of the top cap is electrically coupled to the path to the ground structure.

2. The method of claim 1, including forming a microelectromechanical system (MEMS) device on the substrate.

3. The method of claim 2, wherein the MEMS device is formed as one of a motion sensing MEMS device, a radio frequency (RF) MEMS device and an oscillator MEMS device.

4. The method of claim 1, including forming an electronic device on the substrate.

5. The method of claim 4, wherein the forming the electronic device includes forming the electronic device as a complimentary metal oxide semiconductor (CMOS) device.

6. The method of claim 1, wherein the bonding the top cap to the substrate includes hermetically sealing the top cap to the substrate.

7. The method of claim 1, includes forming the substrate having a silicon on insulator (SOI) device.

8. A method comprising:

providing a substrate;

forming a microelectromechanical system (MEMS) device on the substrate;

forming an electrically conductive ground structure in the substrate and electrically coupled to the substrate;

forming an electrically conductive path to the ground structure in the substrate;

depositing a metal layer on the path to the ground structure;

providing a top cap, wherein the top cap includes an electrically conductive surface;

bonding the top cap to the substrate so that the electrically conductive surface of the top cap is electrically coupled to metal layer.

9. The method of claim 8, wherein the MEMS device is formed as one of a motion sensing MEMS device, a radio frequency (RF) MEMS device and an oscillator MEMS device.

10. The method of claim 8, including forming an electronic device on the substrate.

11. The method of claim 10, wherein the forming the electronic device includes forming the electronic device as a complimentary metal oxide semiconductor (CMOS) device.

12. The method of claim 8, wherein the bonding the top cap to the substrate includes hermetically sealing the top cap to the substrate.

13. The method of claim 8, includes forming the substrate having a silicon on insulator (SOI) device.

14. The method of claim 8, wherein the forming the path to the ground structure includes depositing a metal to form the path.

15-20. -20. (canceled)