DEVICE MADE OF SINGLE-CRYSTAL SILICON

• US 20110014794A1
• Filed: 09/28/2010
• Published: 01/20/2011
• Est. Priority Date: 07/06/2007
• Status: Active Grant

• Current Assignee: Arnd Kaelberer, Helmut Baumann, Heribert Weber, Roland Scheuerer
• Original Assignee: Arnd Kaelberer, Helmut Baumann, Heribert Weber, Roland Scheuerer
• Inventors: Baumann, Helmut, Scheuerer, Roland, KAELBERER, Arnd, Weber, Heribert
• Granted Patent: US 8,298,962 B2
• Time in Patent Office: Days
• US Class Current: 438/753
• CPC Class Codes: B81C 1/00539 Wet etching
• CPC Class Codes: B81C 1/00619 Forming high aspect ratio structures having deep steep walls
• CPC Class Codes: B81C 1/00626 Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
• CPC Class Codes: H01L 21/30608 Anisotropic liquid etching H01L21/3063 takes precedence

Abstract

A device made of single-crystal silicon having a first side, a second side which is situated opposite to the first side, and a third side which extends from the first side to the second side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the third side extending in a first area in a 111 plane of the single-crystal silicon. The third side extends in a second area in a 110 plane of the single-crystal silicon. Furthermore, a production method for producing a device made of single-crystal silicon is described.

Claims

1-4. -4. (canceled)

5. A method for producing a device made of single-crystal silicon, comprising:

(A) supplying a substrate made of single-crystal silicon having a first side, and a second side which is situated opposite to the first side, the first side and the second side each extending in a 100 plane of the single-crystal silicon, the substrate having a thickness between the first side and the second side;

(B) providing a first mask having a first opening with a first opening width, on the first side of the substrate;

(C) providing a second mask, having a second opening with a second opening width, on the second side of the substrate, the first opening and the second opening being situated diametrically opposite to one another, the first opening width being greater than the second opening width, and the second opening width being greater than predefined by the thickness of the substrate and the angle of the 111 plane of the single-crystal silicon starting from the first opening width; and

,

(D) KOH etching the substrate from the first and the second sides, a third side being formed which extends from the first side to the second side, the third side extending in a first area in a 111 plane of the single-crystal silicon and in the second area in a 110 plane of the single-crystal silicon.

6. The method as recited in claim 5, wherein a third side is formed in step (D), which extends in a third area in a 111 plane of the single-crystal silicon, the second area being situated between the first area and the third area.

7. The method as recited in claim 5, wherein the KOH etching of the substrate occurs simultaneously from the first and the second sides.

8. The method as recited in claim 5, wherein the KOH etching of the substrate occurs offset in time from the first and the second sides.