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APPARATUS AND METHOD FOR PRODUCING EPITAXIAL LAYERS

  • US 20110017127A1
  • Filed: 08/14/2008
  • Published: 01/27/2011
  • Est. Priority Date: 08/17/2007
  • Status: Abandoned Application
First Claim
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1. Reactor (100;

  • 400;

    500;

    600) for low-energy plasma-enhanced chemical vapour deposition of an epitaxial semiconductor layer on a semiconductor substrate, comprisinga metallic vacuum vessel (1) enclosing a vacuum chamber (2) connectable to a vacuum pump (18) for evacuating the vacuum chamber (2),an enclosure (3), preferably a quartz or ceramic enclosure, contained inside said vacuum vessel (1), for defining a hot deposition region (4) inside the enclosure (3),an enclosure (7), preferably a quartz or ceramic enclosure or an enclosure coated by a ceramic material or graphite, for defining a cold region (8) adjacent to said hot region (4) with a gate valve (10),a vacuum pump (9) for pumping said hot deposition region (4) and said cold region (8),gas insulation rings (12, 12

    ) to dynamically separate said hot deposition region (4) from said cold region (8) and said cold region (8) from said gate valve (10), to protect said gate valve (10) from corrosive gases and to lower the pressure gradient between said hot region (4) and said cold region (8),a susceptor (5) carrying said substrate, said susceptor (5) being located inside said enclosure (3),means (6) for indirectly heating said substrate,sealed gas injection points (13, 15) in said enclosure (3) for feeding gases into said deposition region (4),an inductively coupled radio-frequency (RF) plasma source comprising a coil (16) and/or a spiral antenna (17), both located outside the quartz enclosure (3),wherein the power and frequency supplied to the coil (16) and/or the spiral antenna (17), and the pressure in said deposition region (4) are adjusted to provideion energies below about 20 eV, preferably below 15 eV, or even more preferably below 10 eVan ion density of at least 1010 cm

    3
    at the substrate surface.

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