MULTI-JUNCTION SOLAR CELL DEVICES

• US 20110017298A1
• Filed: 11/14/2008
• Published: 01/27/2011
• Est. Priority Date: 11/14/2007
• Status: Abandoned Application

• Current Assignee: Stion Corporation
• Original Assignee: Stion Corporation
• Inventors: Lee, Howard W.H.
• Application Number:
  US12/271,704
• Publication Number:
  US 20110017298A1
• Time in Patent Office: Days
• US Class Current: 136/261
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 31/043 Mechanically stacked PV cells
• CPC Class Codes: H01L 31/0725 Multiple junction or tandem solar cells
• CPC Class Codes: H01L 31/0749 including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
• CPC Class Codes: H10K 39/601 Assemblies of multiple devices comprising at least one organic radiation-sensitive element
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A photovoltaic cell structure for manufacturing a photovoltaic device. The photovoltaic cell structure includes a substrate including a surface region. A first conductor layer overlies the surface region. The photovoltaic cell structure includes a lower cell structure. The lower cell structure includes a first P type absorber layer using a first semiconductor metal chalcogenide material and/or other semiconductor material overlying the first conductor layer. The first P type absorber material is characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10⁴ cm⁻¹. The lower cell structure includes a first N⁺ type window layer comprising at least a second metal chalcogenide material and/or other semiconductor material overlying the first P absorber layer. The photovoltaic cell structure includes an upper cell structure. The upper cell structure includes a second P type absorber layer using a third semiconductor metal chalcogenide material. The second P type absorber layer is characterized by a second bandgap ranging from about 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 10⁴ cm⁻¹. A second N⁺ type window layer comprising a fourth metal chalcogenide material overlies the second P absorber layer. A tunneling junction layer is provided between the upper cell structure and the lower cell structure.

Claims

1. A photovoltaic cell structure for manufacturing a photovoltaic device, the photovoltaic cell structure comprises:

a substrate including a surface region;

a first conductor layer overlying the surface region;

a lower cell structure, the lower cell structure comprising a first P type absorber comprising at least a first metal chalcogenide material and/or other suitable semiconductor material overlying the first conductor layer, the first P type absorber material being characterized by a first bandgap ranging from 0.5 eV to 1.0 eV, a first optical absorption coefficient greater than about 10⁴ cm<sup>−

1</sup>, and a first thickness ranging from 0.5 um to 2 um;

a first N⁺ type window layer comprising at least a second metal chalcogenide material and/or other suitable semiconductor material overlying the first P type absorber layer;

a tunneling junction layer overlying the first N⁺ type window layer of the lower cell, the tunneling junction layer comprising at least a p⁺⁺ type semiconductor material and an n⁺⁺ type semiconductor material;

an upper cell structure, the upper cell structure comprising;

a second P type absorber material comprising at least a third metal chalcogenide material overlying the tunneling junction layer, the second P type absorber material being characterized by a second bandgap ranging from 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 10⁴ cm<sup>−

1</sup>, a second thickness ranging from 0.5 um to 2 um;

a second N⁺ type window layer comprising at least a fourth metal chalcogenide material overlying the second absorber layer;

a buffer layer overlying the second N⁺ type window layer of the upper cell structure;

the buffer layer being characterized by a resistivity greater than about 10 kohm-cm; and

a second conductor layer overlying the buffer layer.

2. The structure of claim 1 wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others.

6. The structure of claim 1 wherein the first metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride.

7. The structure of claim 1 wherein the second metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or a semiconductor metal telluride, or a semiconductor metal silicide.

8. The structure of claim 1 wherein the third metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor telluride.

9. The structure of claim 1 wherein the fourth metal chalcogenide material is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or a semiconductor metal telluride.

10. The structure of claim 1 wherein the first P type absorber layer comprises an iron disilicide material.

11. The structure of claim 1 wherein the first N⁺ type window layer comprises a zinc sulfide material.

12. The structure of claim 1 wherein the second P type absorber layer comprises a copper oxide material.

13. The structure of claim 1 wherein the second N⁺ window layer comprises a zinc sulfide material.

14. The structure of claim 1 wherein the first bandgap is less than the second bandgap.

16. The structure of claim 1 wherein the first conductor layer comprises a transparent conducting oxide material selected from ZnO:

Al, SnO;

F, ITO, and others.

18. The structure of claim 1 wherein the second conductor layer comprises a transparent conducting oxide material selected from ZnO:

Al, SnO;

F, ITO, and others.

20. The structure of claim 1 wherein the tunneling junction layer provides a series connection between the upper cell structure and the lower cell structure.

3-5. -5. (canceled)

15. (canceled)

17. (canceled)

19. (canceled)

21. A photovoltaic cell structure for manufacturing of a photovoltaic device, the structure comprises:

a substrate including a surface region;

a first conductor structure overlying the surface region;

a lower cell structure overlying the first conductor structure, the lower cell comprising;

a first P type absorber layer comprising a first metal chalcogenide material and/or other semiconductor material, the first P type absorber layer being characterized by a first bandgap ranging from about 0.5 eV to 1.0 eV, a first optical absorption coefficient greater than about 10⁴ cm<sup>−

1</sup> in a wavelength range comprising about 400 nm to about 800 nm;

a first N⁺ type window layer comprising a second metal chalcogenide material and/or other semiconductor material overlying the first P type absorber layer;

a first buffer layer overlying the first N⁺ type window layer;

a second conductor structure overlying the lower cell structure;

an upper cell structure overlying the second conductor structure, the upper cell structure comprising;

a second P type absorber layer comprising a third metal chalcogenide material overlying the second conductor layer, a bandgap ranging from 1.0 eV to 2.2 eV, a second optical absorption coefficient greater than about 10⁴ cm in a wavelength range comprising about 400 nm to about 800 nm characterize the second P type absorber layer;

a second N⁺ type window layer overlying the second P type absorber layer;

a second buffer layer overlying the second N⁺ type window layer of the upper cell structure;

the buffer layer being characterized by a resistivity greater than about 10 k-ohm cm; and

a third conductor layer overlying the buffer layer.

22. The structure of claim 21 wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others.

23-42. -42. (canceled)

43. A photovoltaic cell structure for manufacturing a photovoltaic device, the structure comprises:

a substrate including a surface region;

a first photovoltaic cell structure overlying the surface region;

the first photovoltaic cell structure comprising;

a first conductor layer;

a first P type absorber layer overlying the first conductor layer, the first P type absorber layer comprising a first metal chalcogenide material and/or other semiconductor material, the first P type absorber layer being characterized by a first bandgap ranging from about 0.5 eV to about 1.0 eV, a first optical absorption coefficient greater than about 10⁴ cm<sup>−

1</sup> in a wavelength range comprising about 400 nm to about 800 nm.

a first N⁺ type window layer comprising a second metal chalcogenide material and or other semiconductor material overlying the first P type absorber layer;

a second conductor layer overlying the first N⁺ type window layer;

a second photovoltaic cell structure;

the second photovoltaic cell structure comprising;

a third conductor layer;

a second P type absorber layer comprising a third metal chalcogenide material, the second P type absorber layer being characterized by a second bandgap ranging from 1.0 eV to 2.2 eV, a second optical absorption coefficient greater than about 10⁴ cm in a wavelength range comprising about 400 nm to about 800 nm;

a second N⁺ type window layer overlying the second P type absorber layer;

a fourth conductor layer overlying the second N⁺ type window layer; and

a glue layer coupling the first photovoltaic cell structure to the second photovoltaic cell structure.

44. The structure of claim 43 wherein the substrate is a semiconductor, for example, silicon, germanium, compound semiconductor material such as a III-V gallium arsenide, germanium, silicon germanium, and others.

49. The structure of claim 43 wherein the second metal chalcogenide material is selected from is selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride.

55. The structure of claim 43 wherein the second N⁺ window layer comprises a metal chalcogenide material selected from a semiconductor metal oxide, a semiconductor metal sulfide, a semiconductor metal selenide, or semiconductor metal telluride.

45-48. -48. (canceled)

50-54. -54. (canceled)

56-126. -126. (canceled)