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MULTI-JUNCTION SOLAR CELL DEVICES

  • US 20110017298A1
  • Filed: 11/14/2008
  • Published: 01/27/2011
  • Est. Priority Date: 11/14/2007
  • Status: Abandoned Application
First Claim
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1. A photovoltaic cell structure for manufacturing a photovoltaic device, the photovoltaic cell structure comprises:

  • a substrate including a surface region;

    a first conductor layer overlying the surface region;

    a lower cell structure, the lower cell structure comprising a first P type absorber comprising at least a first metal chalcogenide material and/or other suitable semiconductor material overlying the first conductor layer, the first P type absorber material being characterized by a first bandgap ranging from 0.5 eV to 1.0 eV, a first optical absorption coefficient greater than about 104 cm

    1
    , and a first thickness ranging from 0.5 um to 2 um;

    a first N+ type window layer comprising at least a second metal chalcogenide material and/or other suitable semiconductor material overlying the first P type absorber layer;

    a tunneling junction layer overlying the first N+ type window layer of the lower cell, the tunneling junction layer comprising at least a p++ type semiconductor material and an n++ type semiconductor material;

    an upper cell structure, the upper cell structure comprising;

    a second P type absorber material comprising at least a third metal chalcogenide material overlying the tunneling junction layer, the second P type absorber material being characterized by a second bandgap ranging from 1.0 eV to 2.2 eV and a second optical absorption coefficient greater than about 104 cm

    1
    , a second thickness ranging from 0.5 um to 2 um;

    a second N+ type window layer comprising at least a fourth metal chalcogenide material overlying the second absorber layer;

    a buffer layer overlying the second N+ type window layer of the upper cell structure;

    the buffer layer being characterized by a resistivity greater than about 10 kohm-cm; and

    a second conductor layer overlying the buffer layer.

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