Thin-film transistor and method of manufacturing the same
First Claim
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1. A thin-film transistor comprising:
- a gate;
a gate insulation layer;
a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer; and
a source and drain on opposite sides of the channel layer,wherein the first oxide semiconductor layer has larger crystal grains than the second oxide semiconductor layer.
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Abstract
Example embodiments relate to thin-film transistors (TFT) and methods for fabricating the same. A thin-film transistor according to example embodiments may include a gate, a gate insulation layer, a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer, and a source and drain on opposite sides of the channel layer. The first oxide semiconductor layer may have relatively large crystal grains compared to the second oxide semiconductor layer.
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Citations
17 Claims
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1. A thin-film transistor comprising:
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a gate; a gate insulation layer; a channel layer including a first oxide semiconductor layer and a second oxide semiconductor layer; and a source and drain on opposite sides of the channel layer, wherein the first oxide semiconductor layer has larger crystal grains than the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of fabricating a thin-film transistor, comprising:
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forming a gate; forming a first oxide semiconductor layer of a crystalline material; forming a second oxide semiconductor layer having smaller crystal grains than the first oxide semiconductor layer, the first and second oxide semiconductor layers constituting a channel layer; and forming a source and drain on opposite sides of the channel layer. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification