THIN FILM TRANSISTOR

• US 20110017992A1
• Filed: 10/06/2010
• Published: 01/27/2011
• Est. Priority Date: 03/18/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: JINBO, Yasuhiro
• Granted Patent: US 8,207,538 B2
• Time in Patent Office: Days
• US Class Current: 257/51
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/78618 characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure silicide contacts, electrodes in general H01L29/458
• CPC Class Codes: H01L 29/78669 with inverted-type structure, e.g. with bottom gate

Abstract

A thin film transistor includes a first insulating layer covering the gate electrode layer; source and drain regions which at least partly overlaps with the gate electrode layer; a pair of second insulating layers which is provided apart from each other in a channel length direction over the first insulating layer and which at least partly overlaps with the gate electrode layer and the pair of impurity semiconductor layers; a pair of microcrystalline semiconductor layers provided apart from each other on and in contact with the second insulating layers; and an amorphous semiconductor layer covering the first insulating layer, the pair of second insulating layers, and the pair of microcrystalline semiconductor layers and which extends to exist between the pair of microcrystalline semiconductor layers. The first insulating layer is a silicon nitride layer and each of the pair of the second insulating layers is a silicon oxynitride layer.

Claims

1. A thin film transistor comprising:

a gate electrode;

a first insulating layer over the gate electrode;

a second insulating layer and a third insulating layer, which are provided over the first insulating layer;

a first microcrystalline semiconductor layer over the second insulating layer;

a second microcrystalline semiconductor layer over the third insulating layer; and

an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer,

wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer.

2. The thin film transistor according to claim 1, wherein the first insulating layer comprises silicon nitride.

3. The thin film transistor according to claim 2, wherein each of the second insulating layer and the third insulating layer comprises silicon oxynitride.

4. The thin film transistor according to claim 1, wherein a nitrogen concentration of the first insulating layer is higher than a nitrogen concentration of the second insulating layer, and is higher than a nitrogen concentration of the third insulating layer.

5. The thin film transistor according to claim 1, wherein a first portion of the first insulating layer which overlaps with the second insulating layer and the third insulating layer is thicker than a second portion of the first insulating layer which does not overlap with the second insulating layer and the third insulating layer.

6. The thin film transistor according to claim 1, wherein a side surface of the first microcrystalline semiconductor layer is aligned with a side surface of the second insulating layer.

7. The thin film transistor according to claim 1, wherein the amorphous semiconductor layer includes amorphous silicon.

8. The thin film transistor according to claim 1, wherein each of the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer comprises phosphorus and silicon.

9. A thin film transistor comprising:

a gate electrode;

a first insulating layer over the gate electrode;

a second insulating layer and a third insulating layer, which are provided over the first insulating layer;

a first microcrystalline semiconductor layer over the second insulating layer;

a second microcrystalline semiconductor layer over the third insulating layer; and

an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer,

wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer, and

wherein a whole of the first microcrystalline semiconductor layer and a whole of the second microcrystalline semiconductor layer overlap the gate electrode.

10. The thin film transistor according to claim 9, wherein the first insulating layer comprises silicon nitride.

11. The thin film transistor according to claim 10, wherein each of the second insulating layer and the third insulating layer comprises silicon oxynitride.

12. The thin film transistor according to claim 9, wherein a nitrogen concentration of the first insulating layer is higher than a nitrogen concentration of the second insulating layer, and is higher than a nitrogen concentration of the third insulating layer.

13. The thin film transistor according to claim 9, wherein a first portion of the first insulating layer which overlaps with the second insulating layer and the third insulating layer is thicker than a second portion of the first insulating layer which does not overlap with the second insulating layer and the third insulating layer.

14. The thin film transistor according to claim 9, wherein a side surface of the first microcrystalline semiconductor layer is aligned with a side surface of the second insulating layer.

15. The thin film transistor according to claim 9, wherein the amorphous semiconductor layer includes amorphous silicon.

16. The thin film transistor according to claim 9, wherein each of the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer comprises phosphorus and silicon.

17. A thin film transistor comprising:

a gate electrode;

a first insulating layer over the gate electrode;

a second insulating layer and a third insulating layer, which are provided over the first insulating layer;

a first microcrystalline semiconductor layer over the second insulating layer;

a second microcrystalline semiconductor layer over the third insulating layer; and

an amorphous semiconductor layer over the first insulating layer, wherein at least a part of the amorphous semiconductor layer is provided between the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer, and is in contact with the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer,

wherein a composition of the first insulating layer is different from a composition of the second insulating layer and a composition of the third insulating layer, and

wherein each of the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer includes an impurity element serving as a donor.

18. The thin film transistor according to claim 17, wherein the first insulating layer comprises silicon nitride.

19. The thin film transistor according to claim 18, wherein each of the second insulating layer and the third insulating layer comprises silicon oxynitride.

20. The thin film transistor according to claim 17, wherein a nitrogen concentration of the first insulating layer is higher than a nitrogen concentration of the second insulating layer, and is higher than a nitrogen concentration of the third insulating layer.

21. The thin film transistor according to claim 17, wherein a first portion of the first insulating layer which overlaps with the second insulating layer and the third insulating layer is thicker than a second portion of the first insulating layer which does not overlap with the second insulating layer and the third insulating layer.

22. The thin film transistor according to claim 17, wherein a side surface of the first microcrystalline semiconductor layer is aligned with a side surface of the second insulating layer.

23. The thin film transistor according to claim 17, wherein the amorphous semiconductor layer includes amorphous silicon.

24. The thin film transistor according to claim 17, wherein each of the first microcrystalline semiconductor layer and the second microcrystalline semiconductor layer comprises phosphorus and silicon.