SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a pixel portion over a substrate, the pixel portion comprising a first transistor; and
a driver circuit over the substrate, the driver circuit comprising a second transistor,wherein the first transistor comprises;
a first gate electrode layer over the substrate;
a gate insulating layer over the first gate electrode layer;
a first oxide semiconductor layer over the gate insulating layer;
a first oxide insulating layer in contact with the part of the first oxide semiconductor layer;
a first source electrode layer and a first drain electrode layer over the first oxide insulating layer and the first oxide semiconductor layer; and
a pixel electrode layer over the first oxide insulating layer,wherein the second transistor comprises;
a second gate electrode layer over the substrate;
the gate insulating layer over the second gate electrode layer;
a second oxide semiconductor layer over the gate insulating layer;
a second source electrode layer and a second drain electrode layer over and the second oxide semiconductor layer; and
a second oxide insulating layer over the second source electrode layer and the second drain electrode layer,wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first oxide insulating layer, the first source electrode layer, the first drain electrode layer and the pixel electrode layer have a light-transmitting property, andwherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer.
1 Assignment
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Accused Products
Abstract
An object is to increase the aperture ratio of a semiconductor device. The semiconductor device includes a driver circuit portion and a display portion (also referred to as a pixel portion) over the same substrate. The driver circuit portion includes a channel-etched thin film transistor for a driver circuit, in which a source electrode and a drain electrode are formed using a metal and a channel layer is formed using an oxide semiconductor, and a driver circuit wiring formed using a metal. The display portion includes a channel protection thin film transistor for a pixel, in which a source electrode and a drain electrode are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor, and a display portion wiring formed using an oxide conductor. The thin film transistors provided in the semiconductor device are formed with a resist mask formed using a multi-tone mask.
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Citations
42 Claims
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1. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor; and a driver circuit over the substrate, the driver circuit comprising a second transistor, wherein the first transistor comprises; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer; a first oxide insulating layer in contact with the part of the first oxide semiconductor layer; a first source electrode layer and a first drain electrode layer over the first oxide insulating layer and the first oxide semiconductor layer; and a pixel electrode layer over the first oxide insulating layer, wherein the second transistor comprises; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the gate insulating layer; a second source electrode layer and a second drain electrode layer over and the second oxide semiconductor layer; and a second oxide insulating layer over the second source electrode layer and the second drain electrode layer, wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first oxide insulating layer, the first source electrode layer, the first drain electrode layer and the pixel electrode layer have a light-transmitting property, and wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor device comprising:
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a pixel portion over a substrate, the pixel portion comprising a first transistor; and a driver circuit over the substrate, the driver circuit comprising a second transistor, wherein the first transistor comprises; a first gate electrode layer over the substrate; a gate insulating layer over the first gate electrode layer; a first oxide semiconductor layer over the gate insulating layer; a first oxide insulating layer in contact with the part of the first oxide semiconductor layer; a first source electrode layer and a first drain electrode layer over the first oxide insulating layer and the first oxide semiconductor layer; and a pixel electrode layer over the first oxide insulating layer, wherein the second transistor comprises; a second gate electrode layer over the substrate; the gate insulating layer over the second gate electrode layer; a second oxide semiconductor layer over the gate insulating layer; a second source electrode layer and a second drain electrode layer over and the second oxide semiconductor layer; and a second oxide insulating layer over the second source electrode layer and the second drain electrode layer, wherein the first gate electrode layer, the gate insulating layer, the first oxide semiconductor layer, the first oxide insulating layer, the first source electrode layer, the first drain electrode layer and the pixel electrode layer have a light-transmitting property, wherein a material of the second source electrode layer and the second drain electrode layer is different from a material of the first source electrode layer and the first drain electrode layer, and wherein the second oxide semiconductor layer comprises a second high-resistance drain region over the second source electrode layer or the second drain electrode layer. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode layer and a second gate electrode layer over a substrate; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; performing a first heat treatment for dehydration or dehydrogenation on the oxide semiconductor film in a gas selected from a nitrogen gas and an inert gas; forming a conductive film over the oxide semiconductor film; patterning the conductive film and the oxide semiconductor film to form a second source electrode layer, a second drain electrode layer, a second oxide semiconductor layer over the second gate electrode layer, and to form a first oxide semiconductor layer over the first gate electrode layer; forming a first oxide insulating layer over the first gate electrode layer, and a second oxide insulating layer over the second gate electrode layer; forming a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer and the first oxide insulating layer; and forming a pixel electrode layer over the first oxide insulating layer, the pixel electrode electrically connected to one of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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34. A method for manufacturing a semiconductor device comprising:
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forming a first gate electrode layer and a second gate electrode layer over a substrate; forming a gate insulating layer over the first gate electrode layer and the second gate electrode layer; forming an oxide semiconductor film over the gate insulating layer; performing a first heat treatment for dehydration or dehydrogenation on the oxide semiconductor film in a gas selected from a nitrogen gas and an inert gas; performing a second heat treatment for the oxide semiconductor film after performing the first heat treatment; forming a conductive film over the oxide semiconductor film; patterning the conductive film and the oxide semiconductor film to form a second source electrode layer, a second drain electrode layer, a second oxide semiconductor layer over the second gate electrode layer, and to form a first oxide semiconductor layer over the first gate electrode layer; forming a first oxide insulating layer over the first gate electrode layer, and a second oxide insulating layer over the second gate electrode layer; forming a first source electrode layer and a first drain electrode layer over the first oxide semiconductor layer and the first oxide insulating layer; and forming a pixel electrode layer over the first oxide insulating layer, electrically connected to one of the first source electrode layer and the first drain electrode layer. - View Dependent Claims (35, 36, 37, 38, 39, 40, 41, 42)
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Specification