THIN-FILM FLIP-CHIP SERIES CONNECTED LEDS

• US 20110018013A1
• Filed: 07/21/2009
• Published: 01/27/2011
• Est. Priority Date: 07/21/2009
• Status: Abandoned Application

• Current Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips N.V.
• Original Assignee: Philips Lumileds Lighting Company LLC (Apollo Global Management, Inc.), Koninklijke Philips Electronics N.V. (Koninklijke Philips N.V.)
• Inventors: SCHIAFFINO, Stefano, MARGALITH, Tal, CHOY, Henry Kwong-Hin, EPLER, John E.
• Application Number:
  US12/506,774
• Publication Number:
  US 20110018013A1
• Time in Patent Office: Days
• US Class Current: 257/91
• CPC Class Codes: H01L 27/153 in a repetitive configuration, e.g. LED bars
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers
• CPC Class Codes: H01L 33/382 the electrode extending partially in or entirely through the semiconductor body

Abstract

A light-emitting diode (LED) is fabricated by forming the LED segments with bond pads covering greater than 85% of a mounting surface of the LED segments and isolation trenches that electrically isolate the LED segments, mounting the LED segments on a submount with a bond pad that couples two or more bond pads from the LED segments, and applying a laser lift-off to remove the growth substrate from the LED layer.

Claims

1. A method for forming a light-emitting device (LED) comprising two or more LED segments, comprising:

forming the LED segments, comprising;

forming LED layers over a growth substrate, the LED layers comprising a first conductivity type layer, a light-emitting layer over the first conductivity layer, and a second conductivity type layer over the light-emitting layer;

electrically isolating the LED layers to form the LED segments; and

forming bond pads coupled to the first conductivity type layer and the second conductivity type layer, the bond pads covering greater than 85% of a mounting surface of the LED segments;

mounting the LED segments on a submount, the submount comprising a bond pad that couples two or more bond pads from two or more LED segments; and

removing the growth substrate from the LED layers.

2. The method of claim 1, wherein electrically isolating the LED layers comprises forming isolation trenches through the LED layers.

3. The method of claim 1, wherein removing the growth substrate from the LED layers comprises applying a laser lift-off to remove the growth substrate from the LED layers.

4. The method of claim 1, wherein the bond pad of the submount couples the LED segments in series or in parallel.

5. The method of claim 1, wherein forming the LED segments further comprises forming a semi-insulating layer over the growth substrate, wherein the LED layers are formed over the semi-insulating layer.

6. The method of claim 5, wherein electrically isolating the LED layers comprises forming isolation trenches through the LED layers down to the semi-insulating layer.

7. The method of claim 1, wherein forming the LED segments further comprises:

forming a first dielectric layer over the LED layers;

forming contacts over the first dielectric layer, the contacts being electrically coupled to the first conductivity type layer and the second conductivity type layer; and

forming a second dielectric layer over the contacts, wherein the bond pads are electrically coupled by the contacts to the first conductivity type and the second conductivity type layers.

8. A light-emitting device (LED), comprising:

two or more electrically isolated LED segments, comprising;

LED layers comprising a first conductivity type layer, a light-emitting layer over the first conductivity layer, and a second conductivity type layer over the light-emitting layer; and

bond pads coupled to the first conductivity type layer and the second conductivity type layer, the bond pads covering greater than 85% of a mounting surface of the LED segments; and

a submount comprising a bond pad that couples two or more bond pads from two or more LED segments.

9. The LED of claim 8, wherein the LED segments are electrically isolated by isolation trenches through the LED layers.

10. The LED of claim 8, wherein the bond pad of the submount couples the LED segments in series or in parallel.

11. The LED of claim 8, wherein the LED segments further comprise a semi-insulating layer, wherein the LED layers are formed over the semi-insulating layer.

12. The LED of claim 11, wherein the LED segments are electrically isolated by isolation trenches through the LED layers down to the semi-insulating layer.

13. The LED of claim 8, wherein the LED segments further comprise:

a first dielectric layer over the LED layers;

contacts over the first dielectric layer, the contacts being electrically coupled to the first conductivity type layer and the second conductivity type layer; and

a second dielectric layer over the contacts, wherein the bond pads are electrically coupled by the contacts to the first conductivity type and the second conductivity type layers.