High-voltage vertical transistor with edge termination structure
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Accused Products
Abstract
A high-voltage transistor includes a drain, a source, and one or more drift regions extending from the drain toward the source. A field plate member laterally surrounds the drift regions and is insulated from the drift regions by a dielectric layer. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. 37 CFR 1.72(b).
106 Citations
41 Claims
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1-9. -9. (canceled)
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10. A high-voltage transistor comprising:
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a substrate having a top surface; a drain of a first conductivity type; a source of the first conductivity type; a first trench filled with a dielectric material; a first conductive field plate member disposed in the dielectric material; a drift region of the first conductivity type that laterally surrounds the first trench and extends in a vertical direction from the drain toward the source, the dielectric material insulating the first conductive field plate member from the drift region; a second trench that laterally surrounds the drift region, the second trench being filled with the dielectric material; a second conductive field plate member disposed in the dielectric material of the second trench, the dielectric material of the second trench insulating the second conductive field plate member from the drift region, and wherein the first conductive field plate members has a length that extends in the vertical direction from the top surface of the substrate downward, the dielectric material of the first trench laterally separating the drift region from the first conductive field plate member, the dielectric material having a width that is substantially the same at all points along the length of the first conductive field plate member. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A high-voltage transistor comprising:
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a substrate having a top surface; a plurality of trenches in the substrate which includes an outer trench that laterally encircles a plurality of inner trenches, the outer trench and inner trenches defining a mesa region that extends in a vertical direction from a top to a bottom of the trenches in the substrate, the mesa region comprising a plurality of drift regions that extend in a first lateral direction, with each end of the drift regions being connected together by a portion of the mesa region that extends in a second lateral direction; a plurality of first field plate members, each being disposed in a corresponding one of the inner trenches and insulated from the mesa region by a dielectric material, each first field plate member having a length that extends in the vertical direction from the top surface of the substrate downward; a second field plate member disposed in the outer trench, the second field plate member being insulated from the mesa region by a second dielectric material. - View Dependent Claims (24, 25, 26, 27, 28)
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29-36. -36. (canceled)
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37. A high-voltage transistor comprising:
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a substrate having a top surface; an outer trench in the substrate; one or more inner trenches laterally encircled by the outer trenches, the outer trench and the one or more inner trenches defining a mesa region that comprises one or more drift regions; one or more inner field plate members, each being disposed in a corresponding one of the one or more inner trenches and insulated from the mesa region by a dielectric material, each of the one or more inner field plate members having a length that extends in the vertical direction from the top surface of the substrate downward; an outer field plate member disposed in the outer trench, the outer field plate member being insulated from the mesa region by the dielectric material. - View Dependent Claims (38, 39, 40, 41)
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Specification