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NON-VOLATILE PROGRAMMABLE MEMORY CELL AND ARRAY FOR PROGRAMMABLE LOGIC ARRAY

  • US 20110018070A1
  • Filed: 09/30/2010
  • Published: 01/27/2011
  • Est. Priority Date: 06/13/2005
  • Status: Active Grant
First Claim
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1. A non-volatile programmable memory cell formed in a semiconductor substrate of a first conductivity type and comprising:

  • a non-volatile MOS transistor of a second conductivity type formed in a first semiconductor region of the first conductivity type and coupled between a first power supply potential and an output node;

    a volatile MOS transistor of the first conductivity type formed in a semiconductor region of the second conductivity type and coupled between the output node and a second power supply potential; and

    a volatile MOS switch transistor of the second conductivity type formed in a second semiconductor region of the first conductivity type and coupled to the output node;

    wherein the first and second semiconductor regions of the first conductivity type are electrically isolated from one another.

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