Method of producing semiconductor device, solid-state imaging device, method of producing electric apparatus, and electric apparatus

• US 20110018083A1
• Filed: 09/29/2010
• Published: 01/27/2011
• Est. Priority Date: 08/29/2007
• Status: Active Grant

• Current Assignee: Sony Semiconductor Solutions Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Miyoshi, Yasufumi
• Granted Patent: US 9,502,599 B2
• Time in Patent Office: Days
• US Class Current: 257/432
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14687 Wafer level processing
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.

Claims

1. (canceled)

2. (canceled)

3. (canceled)

4. (canceled)

5. (canceled)

6. A solid-state imaging device, comprising:

a unit pixel having a second conductivity-type photosensor and

a first conductivity-type element isolation region isolating the unit pixel, wherein

both edges of the first conductivity-type element isolation region are covered by a second conductivity-type impurity.

7. (canceled)

8. An electric apparatus, comprising:

a unit pixel having a second conductivity-type photosensor,

a first conductivity-type element isolation region isolating the unit pixel, and

a lens arranged above the second conductivity-type photosensor, wherein

both edges of the first conductivity-type element isolation region are covered by a second conductivity-type impurity.