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MOSFET gate drive with reduced power loss

  • US 20110018593A1
  • Filed: 09/22/2010
  • Published: 01/27/2011
  • Est. Priority Date: 05/21/2007
  • Status: Active Grant
First Claim
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1. A combination comprising:

  • a power circuit comprising a power MOSFET and a load;

    a gate driver, an output terminal of the gate driver being connected to a gate terminal of the power MOSFET, the gate driver comprising;

    a first input terminal and a second input terminal, the first input terminal being connected to a first voltage source, the second input terminal being connected to a second voltage source; and

    a switching element for switching the output terminal between the first input terminal and second input terminal;

    a current sensor connected in the power circuit; and

    a trim circuit connected to the current sensor and the second voltage source, the trim circuit adapted to adjust the magnitude of a voltage supplied by the second voltage source to a fixed value in response to an output signal from the current sensor;

    wherein a first voltage provided by the first voltage source causes the power MOSFET to be in a fully on condition when delivered to the gate terminal and the fixed value of the voltage provided by the second voltage source causes the power MOSFET to be in a low-current condition when delivered to the gate terminal.

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