Integrated High Frequency BALUN and Inductors
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Accused Products
Abstract
Integrated high frequency balanced-to-unbalanced transformers and inductors suitable for operation in high frequencies, such as radio frequencies. Embodiments disclosed give consideration to issues related to the layout of the top and bottom inductors for the minimization of capacitive effects between layers. A displacement between the conductive paths of the top inductor and the bottom inductor is shown that provides for superior performance over prior art solutions.
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Citations
36 Claims
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1-7. -7. (canceled)
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8. A method for manufacturing an on-chip BALUN transformer using a manufacturing process, the method comprising:
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forming a first winding conductive path in a first metal layer; forming an insulator layer using an insulating material to insulate between said first metal layer and at least a subsequent metal layer; forming asymmetrical second winding conductive path in a second metal layer over at least an insulating layer that insulates the second winding conductive path from at least the first winding conductive path, the second winding conductive path essentially placed over the first winding conductive path, the second winding conductive path being in vertical and horizontal displacement to the first winding conductive path; and
,forming shunts to ensure the continuity of each of the first winding conductive path and the second winding conductive path. - View Dependent Claims (9, 10, 11, 12, 13, 14, 34)
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15-23. -23. (canceled)
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24. A method for manufacturing an on-chip inductor using standard manufacturing processes, the method comprising:
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forming a first inductor from a first clockwise winding conductive path in a first metal layer and a first counterclockwise winding conducting path in the first metal layer, the first clockwise winding and the first counterclockwise winding conductive path being essentially symmetrical, each forming from an internal edge toward an external edge of the respective conducting path, the external edges of the first clockwise winding conductive path and the first counterclockwise winding of the conductive path being connected; forming a first insulating layer using an insulating material; forming shunts in a second metal layer to ensure the continuity of the first clockwise winding and the first counterclockwise winding at crossover points; forming a second insulating layer using an insulating material; forming a second inductor from a second clockwise winding conductive path in a third metal layer and a second counterclockwise winding in the third metal layer, the second clockwise winding and the first counterclockwise winding being essentially symmetrical, the second clockwise winding and the second counterclockwise winding being formed at a displacement from the first clockwise winding and the first counterclockwise winding, each forming from an external edge towards an internal edge of the respective conducting path; forming a third insulating layer using an insulating material; forming shunts in a forth metal layer to ensure the continuity of the second clockwise winding and the second counterclockwise winding at crossover points; forming shunts to connect the internal edge of the first clockwise winding conductive path with the internal edge of the second clockwise winding conductive path; and
,forming shunts to connect the internal edge of the first counterclockwise winding conductive path with the internal edge of the second counterclockwise winding conductive path; the shunts connecting between the first inductor and the second inductor being formed such that the current flow through the inductor is always toward the same direction so the mutual inductance of the inductor is developed in favor of the overall spiral inductance. - View Dependent Claims (25, 26, 27, 28, 29)
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30. A device formed in an integrated circuit (IC) comprising:
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a first winding conductive path formed in a first metal layer of the IC, the first winding conductive path being at least a portion of a spiral; and a second winding conductive path formed in a second metal layer of the IC and essentially insulated by at least an insulating layer formed over the first metal layer, the second winding conductive path being at least a portion of a spiral; the conductive path of the first winding and the conductive path of the second winding formed to be horizontally displaced from each other to reduce capacitive coupling between the first winding and the second winding. - View Dependent Claims (31, 32, 33, 35, 36)
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Specification