SEMICONDUCTOR DEVICE

• US 20110018915A1
• Filed: 07/13/2010
• Published: 01/27/2011
• Est. Priority Date: 07/24/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: ARASAWA, Ryo, UMEZAKI, Atsushi
• Granted Patent: US 9,779,679 B2
• Time in Patent Office: Days
• US Class Current: 345/698
• CPC Class Codes: G09G 2300/0809 Several active elements per pixel in active matrix panels
• CPC Class Codes: G09G 2310/0213 controlling the sequence of the scanning lines with respect to the patterns to be displayed, e.g. to save power
• CPC Class Codes: G09G 2310/0267 Details of drivers for scan electrodes, other than drivers for liquid crystal, plasma or OLED displays
• CPC Class Codes: G09G 3/3266 Details of drivers for scan electrodes
• CPC Class Codes: G09G 3/344 based on particles moving in a fluid or in a gas, e.g. electrophoretic devices electrophoretic devices per se G02F1/167
• CPC Class Codes: G09G 3/3677 suitable for active matrices only
• CPC Class Codes: G11C 19/184 with field-effect transistors, e.g. MOS-FET
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 27/1251 comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
• CPC Class Codes: H01L 27/1255 integrated with passive devices, e.g. auxiliary capacitors
• CPC Class Codes: H01L 28/40 Capacitors

Abstract

It is an object to provide a semiconductor device which can supply a signal with sufficient amplitude to a scan line while power consumption is kept small. Further, it is an object to provide a semiconductor device which can suppress distortion of a signal supplied to the scan line and shorten a rising time and a falling time while power consumption is kept small. A semiconductor device which includes a plurality of pixels each including a display element and at least one first transistor and a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line. A light-transmitting conductive layer is used for a pixel electrode layer of the display element, a gate electrode layer of the first transistor, source and drain electrode layers of the first transistor, and the scan line. The scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor. The source electrode of the second transistor is connected to the scan line.

Claims

1. A semiconductor device comprising:

a plurality of pixels each including a display element and a first transistor; and

a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line,

wherein a pixel electrode layer of the display element, a gate electrode layer of the first transistor, a source electrode layer of the first transistor, a drain electrode layer of the first transistor, and the scan line contain a light-transmitting conductive film,

wherein the scan line driver circuit includes a second transistor and a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor, and

wherein the source electrode of the second transistor is connected to the scan line.

2. The semiconductor device according to claim 1, wherein the light-transmitting conductive film is formed using a sputtering target containing metal oxide.

3. The semiconductor device according to claim 1, wherein the first transistor includes an oxide semiconductor layer.

4. The semiconductor device according to claim 1, wherein the gate electrode layer of the second transistor, the source electrode layer of the second transistor, and the drain electrode layer of the second transistor contain the light-transmitting conductive film, and wherein the second transistor includes an oxide semiconductor layer.

5. The semiconductor device according to claim 1, wherein the semiconductor device is incorporated in one selected from the group consisting of a display device, a computer, an image reproducing device, a goggle-type display, a game machine, a projector, a television receiver, a camera and a mobile phone.

6. A semiconductor device comprising:

a plurality of pixels each including a display element and a first transistor; and

a scan line driver circuit supplying a signal for selecting the plurality of pixels to a scan line,

wherein a pixel electrode layer of the display element, a gate electrode layer of the first transistor, a source electrode layer of the first transistor, a drain electrode layer of the first transistor, and the scan line contain a light-transmitting conductive film,

wherein the scan line driver circuit includes a second transistor, a capacitor for holding a voltage between a gate electrode layer of the second transistor and a source electrode layer of the second transistor, and a third transistor for controlling a connection between the gate electrode layer of the second transistor and a ground electrode, and

wherein the source electrode of the second transistor is connected to the scan line.

7. The semiconductor device according to claim 6, wherein the light-transmitting conductive film is formed using a sputtering target containing metal oxide.

8. The semiconductor device according to claim 6, wherein the first transistor includes an oxide semiconductor layer.

9. The semiconductor device according to claim 6, wherein the gate electrode layer of the second transistor, the source electrode layer of the second transistor, and the drain electrode layer of the second transistor contain the light-transmitting conductive film, and wherein the second transistor includes an oxide semiconductor layer.

10. The semiconductor device according to claim 6, wherein the semiconductor device is incorporated in one selected from the group consisting of a display device, a computer, an image reproducing device, a goggle-type display, a game machine, a projector, a television receiver, a camera and a mobile phone.