Three-Dimensional Mask-Programmable Read-Only Memory with Reserved Space

• US 20110019459A1
• Filed: 09/15/2010
• Published: 01/27/2011
• Est. Priority Date: 01/11/2007
• Status: Abandoned Application

• Current Assignee: Guobiao Zhang
• Original Assignee: Guobiao Zhang
• Inventors: Zhang, Guobiao
• Application Number:
  US12/883,172
• Publication Number:
  US 20110019459A1
• Time in Patent Office: Days
• US Class Current: 365/94
• CPC Class Codes: G11C 17/10 in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 2224/32145 the bodies being stacked
• CPC Class Codes: H01L 2224/48147 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 27/0207 Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/1021 including diodes only
• CPC Class Codes: H10B 20/00 Read-only memory [ROM] devices
• CPC Class Codes: H10B 20/38 Doping programmed, e.g. mask ROM

Abstract

The present invention discloses a three-dimensional mask-programmable read-only memory with reserved space (3D-MPROM_RS). It is released in a sequence of versions. In the original version, its storage space comprises an initial-release space and a reserved space. The initial-release space stores the multimedia files from the initial release. The reserved space, although large enough to store at least one multimedia file, does not store any file. In the later version, the reserved space stores the new release.

Claims

1. A three-dimensional mask-programmable read-only memory with reserved space, comprising a plurality of mask-programmable read-only memory levels vertically stacked above and coupled to a semiconductor substrate, wherein the storage space formed by said memory levels comprises:

an initial-release space, wherein said initial-release space stores a plurality of multimedia files; and

a reserved space, wherein said reserved space has a storage capacity large enough for at least one of said plurality of multimedia files but stores no file.

2. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein said multimedia files include textual files.

3. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein said multimedia files include audio files.

4. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein said multimedia files include image files.

5. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein said multimedia files include video files.

6. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein said multimedia files include program files for computers or mobile devices.

7. The three-dimensional mask-programmable read-only memory with reserved space according to claim 1, wherein the info-masks for said memory levels comprise at least a reserved mask area associated with said reserved space.

8. A three-dimensional mask-programmable read-only memory with reserved space, comprising:

a semiconductor substrate;

a first group of memory levels stacked above and coupled to said semiconductor substrate, said first group comprising a plurality of vertically stacked mask-programmable read-only memory levels, wherein said first group stores a plurality of files; and

a second group of memory level stacked above said first group and coupled to said semiconductor substrate, said second group comprising at least one mask-programmable read-only memory level, wherein each memory level in said second group comprises a reserved space, wherein said reserved space has a storage capacity large enough for at least one of said plurality of files but stores no file.

9. The three-dimensional mask-programmable read-only memory with reserved space according to claim 8, wherein said files include multimedia files.

10. The three-dimensional mask-programmable read-only memory with reserved space according to claim 9, wherein said multimedia files include textual files, audio files, image files, video files and/or programs files.

11. A three-dimensional mask-programmable read-only memory with reserved space, comprising:

a semiconductor substrate;

a plurality of mask-programmable read-only memory levels stacked above and coupled to said semiconductor substrate; and

a plurality of contact vias through the dielectric layers of said plurality of mask-programmable read-only memory levels and coupled to said semiconductor substrate, wherein said contact vias are coupled to none of said plurality of mask-programmable read-only memory levels.

12. The three-dimensional mask-programmable read-only memory with reserved space according to claim 11, wherein said semiconductor substrate comprises a peripheral circuit coupled to said plurality of contact vias, said peripheral circuit working for none of said plurality of mask-programmable read-only memory levels.

13. The three-dimensional mask-programmable read-only memory with reserved space according to claim 11, wherein said plurality of mask-programmable read-only memory levels stores a plurality of files.

14. The three-dimensional mask-programmable read-only memory with reserved space according to claim 13, wherein said files include multimedia files.

15. The three-dimensional mask-programmable read-only memory with reserved space according to claim 14, wherein said multimedia files include textual files, audio files, image files, video files and/or programs files.