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Directional Solid Phase Crystallization of Thin Amorphous Silicon for Solar Cell Applications

  • US 20110021008A1
  • Filed: 07/22/2009
  • Published: 01/27/2011
  • Est. Priority Date: 07/22/2009
  • Status: Active Grant
First Claim
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1. A method of heat treating a crystalline silicon substrate, comprising:

  • depositing an amorphous silicon film on a first surface of the crystalline silicon substrate, wherein the first surface of the crystalline silicon substrate is generally opposite to a second surface; and

    heating the crystalline silicon substrate and the amorphous silicon film to a temperature that is sufficient to crystallize the amorphous silicon film, wherein the heating creates a temperature gradient in which the temperature at the second surface is greater than the temperature at the first surface.

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