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DOSIMETRY APPARATUS , SYSTEMS, AND METHODS

  • US 20110024640A1
  • Filed: 04/06/2009
  • Published: 02/03/2011
  • Est. Priority Date: 04/07/2008
  • Status: Active Grant
First Claim
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1. A direct ion storage (DIS) radiation dosimeter, comprising:

  • a first layer having a MOSFET structure formed thereon by semiconductor processing techniques, the MOSFET structure having a floating gate with an exposed surface;

    a second layer having a concavity therein;

    a third layer, optionally having a concavity therein;

    the first layer being sandwiched between the second and third layer, the three layers being bonded together to form a hermetic seal;

    wherein the concavity in the second layer, and any concavity in the third layer, are aligned with the exposed surface of the floating gate to form an ion chamber.

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