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INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES

  • US 20110024741A1
  • Filed: 09/15/2010
  • Published: 02/03/2011
  • Est. Priority Date: 11/10/2004
  • Status: Active Grant
First Claim
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1. An integrated circuit comprising a P-type region and an N-type region,wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having(a) a composition when in crystalline state represented by In2−

  • xM3xO3 (Zn1−

    y
    M2yO)m, wherein M2 is Mg or Ca;

    M3 is B, Al, Ga or Y;

    0≦

    x≦

    2;

    023 y≦

    1; and

    m is zero or a natural number less than 6, or a mixture of said compounds;

    an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and

    (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.

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