INTEGRATED CIRCUITS UTILIZING AMORPHOUS OXIDES
First Claim
Patent Images
1. An integrated circuit comprising a P-type region and an N-type region,wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having(a) a composition when in crystalline state represented by In2−
- xM3xO3 (Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
023 y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;
an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and
(c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.
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Abstract
Semiconductor devices and circuits with use of transparent oxide film are provided. The semiconductor device having a P-type region and an N-type region, wherein amorphous oxides with electron carrier concentration less than 1018/cm3 is used for the N-type region.
58 Citations
24 Claims
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1. An integrated circuit comprising a P-type region and an N-type region,
wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having (a) a composition when in crystalline state represented by In2− - xM3xO3 (Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
023 y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (2, 3, 4, 6, 20)
- xM3xO3 (Zn1−
-
5. (canceled)
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7-13. -13. (canceled)
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14. An integrated circuit, comprising a circuit, which includes an N-type TFT using amorphous oxide of a compound having
(a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases as an N-type semiconductor and which has less than 10 micro-ampere of current between drain and source terminals when no gate voltage is applied; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (19, 21)
- xM3xO3(Zn1−
-
15. (canceled)
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16. An integrated circuit comprising a first region, a second region and an N-type TFT, the first region and the second region form a heterojunction, and the first region and an active layer of the N-type TFT contain an amorphous oxide satisfying the following conditions (a), (b), and (c)
(a) a composition when in crystalline state represented by In2− - xM3xO3(Zn1−
yM2yO)m, wherein M2 is Mg or Ca;
M3 is B, Al, Ga or Y;
0≦
x≦
2;
0≦
y≦
1; and
m is zero or a natural number less than 6, or a mixture of said compounds;(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases, and a second region forming a heterojunction to said first region; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide. - View Dependent Claims (18)
- xM3xO3(Zn1−
-
17. (canceled)
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22. An integrated circuit comprising a P-type region and an N-type region, wherein the N-type region comprises an N-type TFT comprising an amorphous oxide of a compound having
(a) the amorphous oxides are any of oxides containing In, Ga and Zn, oxides containing In, Zn, and Sn, oxides containing In and Zn, oxides containing In and Sn, and oxides containing In; -
(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron carrier concentration increases; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.
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23. An integrated circuit, comprising a circuit, which includes an N-type TFT using amorphous oxide of a compound having
(a) the amorphous oxides are any of oxides containing In, Ga and Zn, oxides containing In, Zn, and Sn, oxides containing In and Zn, oxides containing In and Sn, and oxides containing In; -
(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases as an N-type semiconductor and which has less than 10 micro-ampere of current between drain and source terminals when no gate voltage is applied; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.
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24. An integrated circuit comprising a first region, a second region and an N-type TFT, the first region and the second region form a heterojunction, and the first region and an active layer of the N-type TFT contain an amorphous oxide satisfying the following conditions (a), (b) and (c)
(a) the amorphous oxides are any of oxides containing In, Ga, and Zn, oxides containing In, Zn and Sn, oxides containing In and Zn, oxides containing In and Sn, and oxides containing In; -
(b) an electric carrier concentration of greater than 1012/cm3 and lesser than 1018/cm3, wherein an electron mobility of the amorphous oxide increases when the electron concentration increases, and a second region forming a heterojunction to said first region; and (c) oxygen defect density resulting from treatment in an atmosphere including oxygen at a predetermined pressure during or after formation of a film of the amorphous oxide.
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Specification