SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a gate electrode layer over an insulating surface;
a gate insulating layer over the gate electrode layer;
an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer including a channel formation region overlapping with the gate electrode layer;
an oxide insulating layer over the oxide semiconductor layer; and
a source electrode layer and a drain electrode layer over the oxide insulating layer,wherein the oxide semiconductor layer comprises a first region which is in contact with the oxide insulating layer and a second region which is in contact with the source electrode layer or the drain electrode layer,wherein the first region comprises the channel formation region and a region which overlaps with the oxide insulating layer covering a periphery and a side surface of the oxide semiconductor layer, andwherein an end surface of the oxide semiconductor layer overlaps with the source electrode layer or the drain electrode layer with the oxide insulating layer interposed therebetween.
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Accused Products
Abstract
An object is to provide a semiconductor device having a structure with which parasitic capacitance between wirings can be sufficiently reduced. An oxide insulating layer serving as a channel protective layer is formed over part of an oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the oxide insulating layer, an oxide insulating layer covering a peripheral portion of the oxide semiconductor layer is formed. The oxide insulating layer which covers the peripheral portion of the oxide semiconductor layer is provided to increase the distance between the gate electrode layer and a wiring layer formed above or in the periphery of the gate electrode layer, whereby parasitic capacitance is reduced.
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Citations
14 Claims
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1. A semiconductor device comprising:
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a gate electrode layer over an insulating surface; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer, the oxide semiconductor layer including a channel formation region overlapping with the gate electrode layer; an oxide insulating layer over the oxide semiconductor layer; and a source electrode layer and a drain electrode layer over the oxide insulating layer, wherein the oxide semiconductor layer comprises a first region which is in contact with the oxide insulating layer and a second region which is in contact with the source electrode layer or the drain electrode layer, wherein the first region comprises the channel formation region and a region which overlaps with the oxide insulating layer covering a periphery and a side surface of the oxide semiconductor layer, and wherein an end surface of the oxide semiconductor layer overlaps with the source electrode layer or the drain electrode layer with the oxide insulating layer interposed therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a gate electrode layer over an insulating surface; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; an oxide insulating layer over the oxide semiconductor layer; a source electrode layer and a drain electrode layer over the oxide insulating layer; and a protective insulating layer over the source electrode layer and the drain electrode layer, wherein the oxide semiconductor layer comprises a first region which is in contact with the oxide insulating layer, a second region which is in contact with the source electrode layer or the drain electrode layer, and a third region which is in contact with the protective insulating layer, wherein in the first region, a channel formation region is a region which overlaps with the gate electrode layer with the gate insulating layer interposed therebetween, wherein the third region is provided between the channel formation region and the second region, and wherein the source electrode layer and the drain electrode layer are formed of a light-transmitting conductive film. - View Dependent Claims (10, 11)
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12. A method for manufacturing a semiconductor device, comprising the steps of:
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forming a gate electrode layer over an insulating surface; forming a gate insulating layer over the gate electrode layer; forming an oxide semiconductor layer over the gate insulating layer; dehydrating or dehydrogenating the oxide semiconductor layer; forming an oxide insulating layer which is in contact with part of the oxide semiconductor layer and covering a periphery and a side surface of the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide insulating layer; and forming a protective insulating layer which is in contact with the oxide insulating layer, the source electrode layer, the drain electrode layer, and the oxide semiconductor layer, wherein the oxide semiconductor layer is prevented from being exposed to air between the step of dehydrating or dehydrogenating the oxide semiconductor layer and the step of forming the oxide insulating layer, so as to prevent water or hydrogen contamination. - View Dependent Claims (13, 14)
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Specification