SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor device comprising:
- a gate electrode layer provided over an insulating surface;
a gate insulating layer provided over the gate electrode layer;
a first oxide semiconductor layer provided over the gate insulating layer;
a second oxide semiconductor layer provided over and in contact with the first oxide semiconductor layer;
an oxide insulating layer which overlaps with a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer and is in contact with the second oxide semiconductor layer; and
a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer,wherein the first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are provided in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer.
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Abstract
In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
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Citations
21 Claims
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1. A semiconductor device comprising:
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a gate electrode layer provided over an insulating surface; a gate insulating layer provided over the gate electrode layer; a first oxide semiconductor layer provided over the gate insulating layer; a second oxide semiconductor layer provided over and in contact with the first oxide semiconductor layer; an oxide insulating layer which overlaps with a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer and is in contact with the second oxide semiconductor layer; and a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer, wherein the first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are provided in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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a gate electrode layer provided over an insulating surface; a gate insulating layer provided over the gate electrode layer; a first oxide semiconductor layer provided over the gate insulating layer; a second oxide semiconductor layer provided over and in contact with the first oxide semiconductor layer; an oxide insulating layer which overlaps with a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer and is in contact with the second oxide semiconductor layer; a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer; and a protective insulating layer which is provided over the oxide insulating layer, the source electrode layer, the drain electrode layer, and a third region of the first oxide semiconductor layer, overlaps with a third region of the second oxide semiconductor layer, and is provided in contact with the second oxide semiconductor layer, wherein the first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are provided in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18, 19)
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20. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode layer over an insulating surface; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the gate insulating layer; forming a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer; forming an oxide insulating layer which overlaps with a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer and is provided in contact with the second oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer, wherein the first oxide semiconductor layer and the second oxide semiconductor layer are formed without being exposed to an outside atmosphere so that intrusion of water and hydrogen into the first oxide semiconductor layer and the second oxide semiconductor layer is prevented after dehydration or dehydrogenation of the first oxide semiconductor layer and the second oxide semiconductor layer, and the first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are formed in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer.
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21. A method for manufacturing a semiconductor device, comprising:
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forming a gate electrode layer over an insulating surface; forming a gate insulating layer over the gate electrode layer; forming a first oxide semiconductor layer over the gate insulating layer; forming a second oxide semiconductor layer over and in contact with the first oxide semiconductor layer; forming an oxide insulating layer which overlaps with a first region of the first oxide semiconductor layer and a first region of the second oxide semiconductor layer and is provided in contact with the second oxide semiconductor layer; forming a source electrode layer and a drain electrode layer which are provided over the oxide insulating layer and a second region of the first oxide semiconductor layer, overlap with a second region of the second oxide semiconductor layer, and are in contact with the second oxide semiconductor layer; and forming a protective insulating layer which is provided over the oxide insulating layer, the source electrode layer, the drain electrode layer, and a third region of the first oxide semiconductor layer, overlaps with a third region of the second oxide semiconductor layer, and is provided in contact with the second oxide semiconductor layer, wherein the first region of the first oxide semiconductor layer and the first region of the second oxide semiconductor layer are formed in a region overlapping with the gate electrode layer and in peripheries and side surfaces of the first oxide semiconductor layer and the second oxide semiconductor layer.
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Specification