OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF PRODUCING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT

• US 20110024790A1
• Filed: 03/26/2009
• Published: 02/03/2011
• Est. Priority Date: 03/31/2008
• Status: Active Grant

• Current Assignee: OSRAM OLED GMBH (Ams-Osram AG)
• Original Assignee: Osram Opto Semiconductors GmbH (Ams-Osram AG)
• Inventors: Wirth, Ralph, Barchmann, Bernd, Wegleiter, Walter
• Granted Patent: US 8,563,998 B2
• Time in Patent Office: Days
• US Class Current: 257/99
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1815 Shape
• CPC Class Codes: H01L 33/44 characterised by the coatings, e.g. passivation layer or anti-reflective coating
• CPC Class Codes: H01L 33/56 Materials, e.g. epoxy or silicone resin
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

An optoelectronic semiconductor component includes a connection support with a connection side, at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support, an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

Claims

1. An optoelectronic semiconductor component comprising:

a connection support with a connection side,

at least one optoelectronic semiconductor chip mounted on the connection side and electrically connected to the connection support,

an adhesion-promoting intermediate film applied to the connection side and covering the latter at least in selected places, and

at least one radiation-transmissive cast body which at least partially surrounds the semiconductor chip, the cast body being connected mechanically to the connection support by the intermediate film.

2. The optoelectronic semiconductor component according to claim 1, wherein a radiation passage face of the semiconductor chip is covered at least in selected places by the intermediate film.

3. The optoelectronic semiconductor component according to claim 1, wherein the intermediate film comprises a silicone film.

4. The optoelectronic semiconductor component according to claim 1, wherein the semiconductor chip comprises chip flanks, and wherein the intermediate film, the connection side and the chip flanks enclose a cavity.

5. The optoelectronic semiconductor component according to claim 1, wherein the cast body comprises a silicone or consists of a silicone.

6. The optoelectronic semiconductor component according to claim 1, wherein the cast body and/or the intermediate film contain at least one admixture in the form of a diffuser, conversion and/or filter agent.

7. The optoelectronic semiconductor component according to claim 1, wherein the connection support comprises a metal or a metal alloy, a plastics material or a ceramic material.

8. The optoelectronic semiconductor component according to claim 1, wherein the intermediate film does not transmit radiation, and wherein the intermediate film comprises an opening at least in places at the radiation passage face.

10. A method of producing the optoelectronic semiconductor component according to claim 1, comprising:

providing a connection support with a connection side,

providing at least one semiconductor chip,

mounting the semiconductor chip on the connection side,

applying an intermediate film to the connection side, and

producing a cast body.

11. The method according to claim 10, wherein the intermediate film is applied over the entire surface of the connection side and of the semiconductor chip.

12. The method according to claim 10, wherein application of the intermediate film comprises:

applying a partially crosslinked intermediate film to the connection side, and

curing the intermediate film applied by lamination.

13. The method according to claim 10, wherein the cast body is produced by compression molding, and the connection support (2) forms part of mold.

14. The method according to claim 10, wherein at least one recess is provided in the intermediate film by laser ablation.

9. The optoelectronic semiconductor component according to claim, having no housing apart from the connection support, the intermediate film and the cast body.

15. (canceled)