METHOD OF FORMING ELECTRICAL CONNECTIONS
First Claim
1. A method of forming electrical connections to a semiconductor wafer, the method comprising:
- providing a semiconductor wafer comprising an insulation layer, the insulation layer having a surface;
forming an elongated column of a metal material comprising copper, protruding from the surface of the insulation layer, wherein the elongated columns of the metal material have a sidewall surface; and
forming a protection layer by a plating process on the sidewall surface of the elongated columns of the metal material, wherein the protection layer comprises Sn.
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Accused Products
Abstract
A method of forming electrical connections to a semiconductor wafer. A semiconductor wafer comprising an insulation layer is provided. The insulation layer has a surface. A patterned mask layer is formed over the surface of the insulation layer. The patterned mask layer exposes portions of the surface of the insulation layer through a plurality of holes. The portions of the plurality of holes are filled with a metal material comprising copper to form elongated columns of the metal material. The elongated columns of the metal material have a sidewall surface. The patterned mask layer is removed to expose the sidewall surface of the elongated columns of the metal material. A protection layer is formed on the exposed sidewall surface of the elongated columns of the metal material.
103 Citations
20 Claims
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1. A method of forming electrical connections to a semiconductor wafer, the method comprising:
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providing a semiconductor wafer comprising an insulation layer, the insulation layer having a surface; forming an elongated column of a metal material comprising copper, protruding from the surface of the insulation layer, wherein the elongated columns of the metal material have a sidewall surface; and forming a protection layer by a plating process on the sidewall surface of the elongated columns of the metal material, wherein the protection layer comprises Sn. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming electrical connections to a semiconductor wafer, the method comprising:
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providing a semiconductor wafer comprising an integrated circuit; forming an insulation layer having a surface over the semiconductor wafer, wherein a conductive path is underlying the insulation layer and electrically contacts with the integrated circuit; forming an elongated column of metal material comprising copper, having a sidewall, protruding from the surface of the insulation layer, wherein the elongated column of metal material contacts with the conductive path through the insulation layer; and forming a protection layer on the sidewall by exposing of elongated column of metal material to a gaseous precursor containing Sn, Si or Ge that reacts with copper in the metal material. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method of forming a semiconductor device, the method comprising:
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providing a semiconductor chip; forming an insulation layer over the semiconductor chip, the insulation layer having a surface; forming an elongated column of metal material comprising copper, having a sidewall, protruding from the surface of the insulation layer; forming a protection layer on the sidewall by exposing of elongated column of metal material to a gaseous precursor containing Sn, Si or Ge that reacts with copper in the metal material; and bonding a semiconductor component onto the elongated column of metal material of the semiconductor chip, the semiconductor component electrically connecting the semiconductor chip. - View Dependent Claims (17, 18, 19, 20)
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Specification