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Method of Fabricating a Device Using Low Temperature Anneal Processes, a Device and Design Structure

  • US 20110027956A1
  • Filed: 07/29/2009
  • Published: 02/03/2011
  • Est. Priority Date: 07/29/2009
  • Status: Active Grant
First Claim
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1. A method of manufacturing a device, comprising:

  • forming a stress liner over a gate structure;

    subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force;

    stripping the stress liner from the gate structure; and

    performing an activation anneal on the gate structure.

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