Method of Fabricating a Device Using Low Temperature Anneal Processes, a Device and Design Structure
First Claim
1. A method of manufacturing a device, comprising:
- forming a stress liner over a gate structure;
subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force;
stripping the stress liner from the gate structure; and
performing an activation anneal on the gate structure.
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Accused Products
Abstract
A method of fabricating a device using a sequence of annealing processes is provided. More particularly, a logic NFET device fabricated using a low temperature anneal to eliminate dislocation defects, method of fabricating the NFET device and design structure is shown and described. The method includes forming a stress liner over a gate structure and subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force in single crystalline silicon near the gate structure as a way to memorized the stress effort. The method further includes stripping the stress liner from the gate structure and performing an activation anneal at high temperature on device.
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Citations
25 Claims
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1. A method of manufacturing a device, comprising:
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forming a stress liner over a gate structure; subjecting the gate structure and stress liner to a low temperature anneal process to form a stacking force; stripping the stress liner from the gate structure; and performing an activation anneal on the gate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A method of manufacturing a logic NFET, comprising:
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forming a gate structure on a wafer; depositing a stress material over the gate structure; subjecting the gate structure and stress liner to a low temperature anneal process at a first temperature; stripping the stress liner from the gate structure; and performing an activation anneal at a second temperature higher than the first temperature. - View Dependent Claims (12, 13, 14, 15, 16)
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17. A method of forming an NFET device, comprising:
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forming a gate structure on a wafer; depositing a stress material on the gate structure and portions of the wafer; subjecting the stress material, gate structure and wafer to a low temperature anneal in a range of about 550°
C. to about 650°
C. to form a stacking force under the gate structure;stripping the stress material from the gate structure and the portions of the wafer; and subjecting the gate structure and wafer to an activation anneal, which is at a temperature higher than the low temperature anneal. - View Dependent Claims (18, 19, 20, 21)
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22. A method in a computer-aided design system for generating a functional design model of a logic NFET device, the method comprising:
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generating a functional representation of a gate structure on a wafer; generating a functional representation of a stress material on the gate structure; generating a functional representation of a low temperature anneal process in a range of about 550°
C. to about 650°
C. on the stress material;generating a functional representation of the stress material being stripped from the gate structure; and generating a functional representation of the gate structure being subjected to an activation anneal after the stress material is stripped, the activation anneal is at a temperature higher than the low temperature anneal. - View Dependent Claims (23, 24, 25)
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Specification