INDIUM SURFACTANT ASSISTED HVPE OF HIGH QUALITY GALLIUM NITRIDE AND GALLIUM NITRIDE ALLOY FILMS
First Claim
1. A method of depositing a group III nitride film comprising:
- providing an In source and a Ga source;
depositing a GaN film;
depositing a monolayer of In on the surface of the GaN film; and
heating the GaN film to a deposition temperature sufficiently high to prevent the In from being incorporated into the GaN film.
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Accused Products
Abstract
One embodiment of depositing a gallium nitride (GaN) film on a substrate comprises providing a source of indium (In) and gallium (Ga) and depositing a monolayer of indium (In) on the surface of the gallium nitride (GaN) film. The monolayer of indium (In) acts as a surfactant to modify the surface energy and facilitate the epitaxial growth of the film by suppressing three dimensional growth and enhancing or facilitating two dimensional growth. The deposition temperature is kept sufficiently high to enable the indium (In) to undergo absorption and desorption on the gallium nitride (GaN) film without being incorporated into the solid phase gallium nitride (GaN) film. The gallium (Ga) and indium (In) can be provided by a single source or separate sources.
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Citations
9 Claims
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1. A method of depositing a group III nitride film comprising:
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providing an In source and a Ga source; depositing a GaN film; depositing a monolayer of In on the surface of the GaN film; and heating the GaN film to a deposition temperature sufficiently high to prevent the In from being incorporated into the GaN film. - View Dependent Claims (2, 3, 5, 6, 7, 8, 9)
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Specification