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ETCH METHOD IN THE MANUFACTURE OF AN INTEGRATED CIRCUIT

  • US 20110027999A1
  • Filed: 08/16/2006
  • Published: 02/03/2011
  • Est. Priority Date: 08/16/2006
  • Status: Abandoned Application
First Claim
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1. A method for etching a substrate in the manufacture of a semiconductor device, the method comprising:

  • contacting a surface of the substrate with ions extracted from a plasma formed from a gas comprising one or more of an oxygen-containing species, a nitrogen-containing species and an inert gas, and separately contacting the surface of the substrate with a plasma formed from a gas comprising a fluorine-containing species.

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