SUBSTRATE PROCESSING APPARATUS AND METHOD

• US 20110028001A1
• Filed: 03/27/2009
• Published: 02/03/2011
• Est. Priority Date: 03/27/2008
• Status: Active Grant

• Current Assignee: Eugene Technology Co., Ltd.
• Original Assignee: Eugene Technology Co., Ltd.
• Inventors: Je, Sung-Tae, Park, Chan-Yong, Yang, Il-Kwang
• Granted Patent: US 8,528,499 B2
• Time in Patent Office: Days
• US Class Current: 438/758
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01J 37/32449 Gas control, e.g. control of the gas flow

Abstract

Disclosed is a substrate processing apparatus and method. The substrate processing apparatus includes a process chamber (10) providing an internal space, in which a process is carried out onto a substrate; a support member (30) installed in the process chamber (10) to support the substrate; and a shower head (20) located above the support member (30) to supply a source gas toward the support member (30), wherein the shower head (20) includes a first injection surface (24) located at a position separated from the upper surface of the substrate by a first distance, and provided with outlets of first injection holes (24a) to inject the source gas; and a second injection surface (26) located at a position separated from the upper surface of the substrate by a second distance being different from the first distance, and provided with outlets of second injection holes (26a) to inject the source gas.

Claims

1. A substrate processing apparatus comprising:

a process chamber providing an internal space, in which a process is carried out onto a substrate;

a support member installed in the process chamber to support the substrate; and

a shower head located above the support member to supply a source gas toward the support member,

wherein the shower head includes;

a first injection surface located at a position separated from the upper surface of the substrate placed on the support member by a first distance, and provided with outlets of first injection holes to inject the source gas; and

a second injection surface located at a position separated from the upper surface of the substrate placed on the support member by a second distance being different from the first distance, and provided with outlets of second injection holes to inject the source gas.

2. The apparatus according to claim 1, wherein:

the first distance is larger than the second distance; and

the second injection surface is formed in a circular ring shape.

3. The apparatus according to claim 1, wherein:

the first distance is larger than the second distance; and

the second injection surface is formed in a rectangular ring shape.

4. A substrate processing apparatus comprising:

a process chamber providing an internal space, in which a process is carried out onto a substrate;

a support member installed in the process chamber to support the substrate; and

a shower head located above the support member, and including a plurality of first injection holes and a plurality of second injection holes to supply a source gas toward the support member,

wherein outlets of the second injection holes are closer to the substrate than outlets of the first injection holes.

5. A substrate processing method, in which a source gas is supplied to a substrate to process the substrate, comprising supplying the source gas to the substrate using first injection holes separated from the upper surface of the substrate by a first distance and second injection holes separated from the upper surface of the substrate by a second distance,

wherein the first distance is different from the second distance.