MICROMACHINED INERTIAL SENSOR DEVICES
First Claim
Patent Images
1. A sensor for measuring a motion thereof, comprising:
- a frame;
a first planar proof mass section attached to the frame by a first flexure; and
a second planar proof mass section attached to the frame by a second flexure;
wherein the frame, the first planar proof mass section, and the second planar proof mass section are formed in a micromachined layer and are adapted to measure angular rates about three axes and linear accelerations about the three axes.
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Abstract
A micromachined inertial sensor with a single proof-mass for measuring 6-degree-of-motions. The single proof-mass includes a frame, an x-axis proof mass section attached to the frame by a first flexure, and a y-axis proof mass section attached to the frame by a second flexure. The single proof-mass is formed in a micromachined structural layer and is adapted to measure angular rates about three axes with a single drive motion and linear accelerations about the three axes.
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Citations
25 Claims
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1. A sensor for measuring a motion thereof, comprising:
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a frame; a first planar proof mass section attached to the frame by a first flexure; and a second planar proof mass section attached to the frame by a second flexure; wherein the frame, the first planar proof mass section, and the second planar proof mass section are formed in a micromachined layer and are adapted to measure angular rates about three axes and linear accelerations about the three axes. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21)
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22. A device for measuring a motion thereof, comprising:
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a first wafer; a device layer including; a frame; a first planar proof mass section attached to the frame by a first flexure; and a second planar proof mass section attached to the frame by a second flexure; wherein the frame, the first planar proof mass section, and the second planar proof mass section are formed in a micromachined layer and are adapted to measure angular rates about three axes and linear accelerations about the three axes; and a second wafer, the first and second wafer being bonded to the device layer. - View Dependent Claims (23, 24, 25)
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Specification