Method of Passivating and Reducing Reflectance of a Photovoltaic Cell

• US 20110030778A1
• Filed: 08/06/2010
• Published: 02/10/2011
• Est. Priority Date: 08/06/2009
• Status: Abandoned Application

• Current Assignee: Energy Focus, Inc.
• Original Assignee: Energy Focus, Inc.
• Inventors: Takacs, Laszlo A., Buelow, Roger F. II
• Application Number:
  US12/852,132
• Publication Number:
  US 20110030778A1
• Time in Patent Office: Days
• US Class Current: 136/256
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: Y02E 10/50 Photovoltaic [PV] energy

Abstract

Disclosed is a method of passivating and reducing reflectance of a silicon photovoltaic cell. The method includes the step of providing a silicon wafer of a solar cell having a major surface. A passivation layer of silicon nitride is applied on at least 98 percent of the major surface through a vacuum deposition process. An index-matching film structure, different from silicon nitride, is applied on top of the passivation layer. The index matching film structure provides the majority of the antireflective property of the combination of the passivation layer and the index matching film structure.

Claims

1. A method of passivating and reducing reflectance of a silicon photovoltaic cell, comprising the steps of:

a) providing a silicon wafer of a solar cell having a major surface;

b) applying a passivation layer of silicon nitride on at least 98 percent of said major surface through a vacuum deposition process; and

c) applying an index-matching film structure, different from silicon nitride, on top of the passivation layer;

d) the index matching film structure providing the majority, of the antireflective property of the combination of the passivation layer and the index matching film structure.

2. The method of claim 1, further comprising the step of applying an adhesive layer on top of the index-matching film structure for receiving an encapsulant.

3. The method of claim 1, wherein the index-matching film structure provides at least 90 percent of the antireflective property of the combination of the passivation layer and the index-matching film structure.

4. The method of claim 1, wherein the silicon nitride passivation layer has an average thickness of less than about 120 angstroms.

5. The method of claim 1, wherein the index-matching film structure comprises a single layer of titanium dioxide.

6. The method of claim 1, wherein the index-matching film structure is a single layer of titanium dioxide applied by liquid phase deposition.

7. The method of claim 6, wherein material to be deposited in the liquid phase deposition is produced through a Sol-Gel process.

8. The method of claim 1, wherein the index-matching film structure is a single layer of tantalum (v) oxide applied by liquid phase deposition.

9. The method of claim 8, wherein material to be deposited in the liquid phase deposition is produced through a Sol-Gel process.

10. The method of claim 1, wherein the index-matching film structure is a single layer of niobium (v) oxide applied by liquid phase deposition.

11. The method of claim 10, wherein material to be deposited in the liquid phase deposition is produced through a Sol-Gel process.

12. The method of claim 1, wherein the index-matching film structure comprises a multi-layer optical interference coating having alternating layers of material with different indices of refraction.

13. The method of claim 12, wherein the optical interference coating comprises silica and one of titanium (IV) dioxide, niobium (V) oxide, and niobium (V) oxide.

14. The method of claim 12, wherein the optical interference coating is applied by a liquid phase deposition Sol-Gel process.

15. A photovoltaic cell made according to the process recited in claim 1.

16. A photovoltaic cell made according to the process recited in claim 6.