MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

• US 20110031494A1
• Filed: 10/25/2010
• Published: 02/10/2011
• Est. Priority Date: 10/31/2006
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: TAKAHASHI, Erika, FUJII, Gen
• Granted Patent: US 8,330,157 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: H10K 10/466 Lateral bottom-gate IGFETs comprising only a single gate
• CPC Class Codes: H10K 10/476 comprising at least one organic layer and at least one inorganic layer
• CPC Class Codes: H10K 71/611 using printing deposition, e.g. ink jet printing

Abstract

A method of manufacturing a semiconductor device includes steps of forming a gate electrode over a light-transmitting substrate, forming a gate insulating layer containing an inorganic material over the gate electrode and the substrate, forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer, polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode as a mask, forming an organic polymer layer by removing a residue of the organic layer, being other than polymerized, forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed, forming source and drain electrodes by applying a composition containing a conductive material over the organic polymer layer, and forming a semiconductor layer over the gate electrode, the source and drain electrodes.

Claims

1. A semiconductor device comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in a region which is over the gate insulating layer and which does not overlap with the gate electrode layer;

a source electrode layer and a drain electrode layer over the organic polymer layer; and

a semiconductor layer over the gate insulating layer, the source electrode layer, and the drain electrode layer,

wherein the semiconductor layer includes an oxide semiconductor layer.

2. The semiconductor device according to claim 1,

further comprising a display element electrically connected to the source electrode layer or the drain electrode layer.

3. The semiconductor device according to claim 1, wherein the semiconductor layer includes zinc or tin.

4. A semiconductor device comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in a region which is over the gate insulating layer and which does not overlap with the gate electrode layer;

a source electrode layer and a drain electrode layer over the organic polymer layer; and

a semiconductor layer over the gate insulating layer with an organosilane film having a hydrolytic group therebetween,

wherein the semiconductor layer includes an oxide semiconductor layer.

5. The semiconductor device according to claim 4, wherein the organosilane film having the hydrolytic group is an octadecyltrimethoxysilane film.

6. The semiconductor device according to claim 4,

further comprising a display element electrically connected to the source electrode layer or the drain electrode layer.

7. The semiconductor device according to claim 4, wherein the semiconductor layer includes zinc or tin.

8. A semiconductor device comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in two first regions on the gate insulating layer and outside position of the gate electrode layer;

a source electrode layer and a drain electrode layer over the organic polymer layer; and

a semiconductor layer in a second region on the gate insulating layer and between the two first regions,

wherein a surface energy in the second region is lower than a surface energy in the two first regions,

wherein the semiconductor layer includes an oxide semiconductor layer.

9. The semiconductor device according to claim 8,

further comprising a display element electrically connected to the source electrode layer or the drain electrode layer.

10. The semiconductor device according to claim 8, wherein the semiconductor layer includes zinc or tin.

11. A semiconductor device comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in two first regions on the gate insulating layer and outside position of the gate electrode layer;

a source electrode layer and a drain electrode layer over the organic polymer layer; and

a semiconductor layer in a second region on the gate insulating layer and between the two first regions, with an organosilane film having a hydrolytic group therebetween,

wherein a surface energy in the second region is lower than a surface energy in the two first regions, and

wherein the semiconductor layer includes an oxide semiconductor layer.

12. The semiconductor device according to claim 11, wherein the organosilane film having the hydrolytic group is an octadecyltrimethoxysilane film.

13. The semiconductor device according to claim 11,

further comprising a display element electrically connected to the source electrode layer or the drain electrode layer.

14. The semiconductor device according to claim 11, wherein the semiconductor layer includes zinc or tin.

15. An electronic paper comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in a region which is over the gate insulating layer and which does not overlap of the gate electrode layer;

a source electrode layer and a drain electrode layer over the organic polymer layer;

a semiconductor layer over the gate insulating layer and the source electrode layer and the drain electrode layer;

a first electrode over the semiconductor layer, the first electrode being electrically connected to the source electrode layer or the drain electrode layer;

a second electrode over the first electrode; and

a twist ball between the first electrode and the second electrode,

wherein the semiconductor layer includes an oxide semiconductor layer.

16. The electronic paper according to claim 15, wherein the semiconductor layer includes zinc or tin.

17. An electronic paper comprising:

a gate electrode layer over a light-transmitting substrate;

a gate insulating layer containing an inorganic material over the gate electrode layer;

an organic polymer layer in a region which is over the gate insulating layer and which does not overlap of the gate electrode layer;

a pair of a source electrode layer and a drain electrode layer over the organic polymer layer;

a semiconductor layer over the gate insulating layer with an organosilane film having a hydrolytic group therebetween;

a first electrode over the semiconductor layer, the first electrode being electrically connected to the source electrode layer or the drain electrode layer;

a second electrode over the first electrode; and

a twist ball between the first electrode and the second electrode,

wherein the semiconductor layer includes an oxide semiconductor layer.

18. The electronic paper according to claim 17, wherein the organosilane film having the hydrolytic group is an octadecyltrimethoxysilane film.

19. The electronic paper according to claim 17, wherein the semiconductor layer includes zinc or tin.

20. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a light-transmitting substrate;

forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;

forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer;

polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;

foaming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;

forming an organosilane film including a hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;

fowling a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer; and

forming a semiconductor layer over the gate electrode layer, the source electrode layer, and the drain electrode layer,

wherein the semiconductor layer includes an oxide semiconductor layer.

21. The method of manufacturing a semiconductor device according to claim 20, further comprising forming a display element electrically connected to the source electrode layer or the drain electrode layer.

22. The method of manufacturing a semiconductor device according to claim 20, wherein the semiconductor layer includes zinc or tin.

23. A method of manufacturing a semiconductor device comprising the steps of:

forming a gate electrode layer over a light-transmitting substrate;

forming a gate insulating layer containing an inorganic material over the gate electrode layer and the substrate;

forming an organic layer containing a photopolymerizable reactive group over the gate insulating layer ;

polymerizing selectively the organic layer by irradiating the organic layer with light from back side of the substrate, using the gate electrode layer as a mask;

forming an organic polymer layer by removing a residue of the organic layer, which is other than polymerized;

forming a first organosilane film including a first hydrolytic group over the gate insulating layer in a region other than a region in which the organic polymer layer is formed;

forming a source electrode layer and a drain electrode layer by applying a composition containing a conductive material over the organic polymer layer;

removing the first organosilane film;

forming a second organosilane film having a second hydrolytic group over the gate electrode layer, the source electrode layer, and the drain electrode layer; and

forming a semiconductor layer over the second organosilane film,

wherein the semiconductor layer includes an oxide semiconductor layer.

24. The method of manufacturing a semiconductor device according to claim 23, wherein the second organosilane film is formed using octadecyltrimethoxysilane.

25. The method of manufacturing a semiconductor device according to claim 23, further comprising fowling a display element electrically connected to the source electrode layer or the drain electrode layer.

26. The method of manufacturing a semiconductor device according to claim 23, wherein the semiconductor layer includes zinc or tin.