SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a pixel portion including a first thin film transistor; and
a driver circuit portion including a second thin film transistor,wherein the pixel portion and the driver circuit portion are formed over a substrate,wherein the first thin film transistor includes, over the substrate;
a first source electrode layer,a first drain electrode layer,an oxide semiconductor layer formed so as to be electrically connected to the first source electrode layer and the first drain electrode layer,a gate insulating layer formed so as to cover the oxide semiconductor layer,a first gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer,a protective insulating layer formed so as to cover the first gate electrode layer, anda pixel electrode layer over the protective insulating layer,wherein the first source electrode layer, the first drain electrode layer, the oxide semiconductor layer, the gate insulating layer, the first gate electrode layer, the protective insulating layer, and the pixel electrode layer of the first thin film transistor have a light-transmitting property,wherein a second gate electrode layer of the second thin film transistor is covered with the protective insulating layer, andwherein a material of a second source electrode layer, a second drain electrode layer, and the second gate electrode layer of the second thin film transistor is different from a material of the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor, and is a conductive material with lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor.
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Accused Products
Abstract
An object is to provide a semiconductor device in which characteristics of a driver circuit portion are improved while the aperture ratio of a pixel portion is increased. Alternatively, it is an object to provide a semiconductor device with low power consumption or to provide a semiconductor device in which the threshold voltage of a transistor can be controlled. The semiconductor device includes a substrate having an insulating surface, a pixel portion provided over the substrate, and at least some of driver circuits for driving the pixel portion. A transistor included in the pixel portion and a transistor included in the driver circuit are top-gate bottom-contact transistors. Electrodes and a semiconductor layer of the transistor in the pixel portion have light-transmitting properties. The resistance of electrodes in the driver circuit is lower than the electrodes included in the transistor in the pixel portion.
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Citations
12 Claims
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1. A semiconductor device comprising:
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a pixel portion including a first thin film transistor; and a driver circuit portion including a second thin film transistor, wherein the pixel portion and the driver circuit portion are formed over a substrate, wherein the first thin film transistor includes, over the substrate; a first source electrode layer, a first drain electrode layer, an oxide semiconductor layer formed so as to be electrically connected to the first source electrode layer and the first drain electrode layer, a gate insulating layer formed so as to cover the oxide semiconductor layer, a first gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer, a protective insulating layer formed so as to cover the first gate electrode layer, and a pixel electrode layer over the protective insulating layer, wherein the first source electrode layer, the first drain electrode layer, the oxide semiconductor layer, the gate insulating layer, the first gate electrode layer, the protective insulating layer, and the pixel electrode layer of the first thin film transistor have a light-transmitting property, wherein a second gate electrode layer of the second thin film transistor is covered with the protective insulating layer, and wherein a material of a second source electrode layer, a second drain electrode layer, and the second gate electrode layer of the second thin film transistor is different from a material of the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor, and is a conductive material with lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A semiconductor device comprising:
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a pixel portion including a first thin film transistor; and a driver circuit portion including a second thin film transistor, wherein the pixel portion and the driver circuit portion are formed over a substrate, wherein the first thin film transistor includes, over the substrate; a first source electrode layer, a first drain electrode layer, an oxide semiconductor layer formed so as to be electrically connected to the first source electrode layer and the first drain electrode layer, a gate insulating layer formed so as to cover the oxide semiconductor layer, a first gate electrode layer provided over a region of the gate insulating layer, which overlaps with the oxide semiconductor layer, a protective insulating layer formed so as to cover the first gate electrode layer, and a pixel electrode layer over the protective insulating layer, wherein the first source electrode layer, the first drain electrode layer, the oxide semiconductor layer, the gate insulating layer, the first gate electrode layer, the protective insulating layer, and the pixel electrode layer of the first thin film transistor have a light-transmitting property, wherein a second gate electrode layer of the second thin film transistor is covered with the protective insulating layer, and wherein a second source electrode layer, a second drain electrode layer, and the second gate electrode layer of the second thin film transistor are formed using a stack of a film containing the same material as the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor; and
a film containing a conductive material with lower resistance than the first source electrode layer, the first drain electrode layer, and the first gate electrode layer of the first thin film transistor. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification