SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A semiconductor device, comprising:
- a semiconductor substrate;
a gate electrode formed over the semiconductor substratea source extension region and a drain extension region having a first depth formed in the semiconductor substrate;
a source region and a drain region having a second depth greater than the first depth formed in the semiconductor substrate;
semiconductor layers including SiGe formed in the source region and the drain region; and
impurity regions including at least one of oxygen and carbon located along an interface between the semiconductor layers and the semiconductor substrate.
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Abstract
A semiconductor device includes a field effect transistor and a strain generating layer to apply a stress to a channel region of the field effect transistor. The strain generating layer contains at least one of oxygen and nitrogen of 1.0×1018 cm−3 to 5.0×1019 cm−3, or alternatively, the strain generating layer contains self-interstitial atoms and/or vacancies of 1.0×1018 cm−3 to 5.0×1019 cm−3. In the latter case, at least a portion of the self-interstitial atoms and/or the vacancies exist as a cluster.
9 Citations
6 Claims
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1. A semiconductor device, comprising:
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a semiconductor substrate; a gate electrode formed over the semiconductor substrate a source extension region and a drain extension region having a first depth formed in the semiconductor substrate; a source region and a drain region having a second depth greater than the first depth formed in the semiconductor substrate; semiconductor layers including SiGe formed in the source region and the drain region; and impurity regions including at least one of oxygen and carbon located along an interface between the semiconductor layers and the semiconductor substrate. - View Dependent Claims (3, 4)
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2. A semiconductor device comprising:
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a semiconductor substrate; a gate electrode formed over the semiconductor substrate; a source extension region and a drain extension region having a first depth formed in the semiconductor substrate; a source region and a drain region having a second depth greater than the first depth formed in the semiconductor substrate; semiconductor layers including SiC formed in the source region and the drain region; and impurity regions including at least one of oxygen and carbon located along an interface between the semiconductor layers and the semiconductor substrate. - View Dependent Claims (5, 6)
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Specification
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Current AssigneeFujitsu Limited
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Original AssigneeFujitsu Semiconductor Limited (Fujitsu Limited)
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InventorsHara, Akito
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/288
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CPC Class CodesH01L 21/26506 in group IV semiconductorsH01L 29/1054 with a variation of the com...H01L 29/165 in different semiconductor ...H01L 29/66636 with source or drain recess...H01L 29/78 with field effect produced ...H01L 29/7848 the means being located in ...
