Colloidal-Processed Silicon Particle Device

• US 20110032743A1
• Filed: 07/14/2010
• Published: 02/10/2011
• Est. Priority Date: 08/07/2008
• Status: Active Grant

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Tu, Chang-Ching, Zhan, Changqing, Tang, Liang, Huang, Jiandong
• Granted Patent: US 8,383,432 B2
• Time in Patent Office: Days
• US Class Current: 365/112
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02601 Nanoparticles fullerenes H10K85/211
• CPC Class Codes: H01L 21/02628 using solutions
• CPC Class Codes: H01L 33/18 within the light emitting region

Abstract

Colloidal-processed Si particle devices, device fabrication, and device uses have been presented. The generic device includes a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing. A colloidal-processed Si particle layer overlies the first electrode, the second electrode, and the spacing between the electrodes. The Si particle layer includes a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.

Claims

1. A colloidal-processed silicon (Si) particle device comprising:

a substrate;

a first electrode overlying the substrate;

a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing; and

,

a colloidal-processed Si particle layer overlying the first electrode, the second electrode, and the spacing between the electrodes, the Si particle layer including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles.

2. The device of claim 1 wherein the device is a memory cell.

3. The device of claim 2 wherein a negative first bias voltage is applied between the first and second electrodes, creating a negative residual current in response to a subsequent application of a zero voltage.

4. The device of claim 3 wherein a positive second bias voltage is applied between the first and second electrode, creating a positive residual current in response to a subsequent application of a zero voltage.

5. The device of claim 1 wherein the device is a light sensing device.

6. The device of claim 5 wherein a first resistance between the first and second electrodes is created in response to a first bias voltage in a dark ambient condition;

and,

wherein a second resistance, less than the first resistance, is created in response to the first bias voltage, when the device is illuminated with light in the spectrum between ultra-violet and visible.

7. The device of claim 1 wherein the micro-sized Si particles are rod-shaped, having a length of about 10 microns and a diameter of about 2 micron;

and,

wherein the nano-sized Si particles have a spherical shape with a diameter in a range of 1 to 5 nanometers.

8. A process for forming a colloidal-processed silicon (Si) particle device, the process comprising:

providing a substrate;

forming a first electrode overlying the substrate;

forming a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing; and

,

depositing a colloidal Si particle suspension overlying the first electrode, the second electrode, and the spacing between the electrodes, the colloidal Si particle suspension including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles suspended in a non-polar evaporative solvent with alkene.

9. The method of claim 8 wherein depositing the colloidal Si particle suspension includes suspending colloidal Si particles in a hexane/1-octene (1/1 volume ratio) solvent.

10. The method of claim 9 wherein depositing the colloidal Si particle suspension includes depositing 1-octene bonded with the hydrogen-terminated Si particles, forming modified Si particles formed from octane capping ligands attached to the Si particles.

11. The method of claim 8 wherein depositing the colloidal Si particle suspension includes depositing the colloidal Si particles using a process selected from a group consisting of drop-casting, screen printing, spin-coating, and inkjet printing.

12. The method of claim 8 wherein depositing the colloidal Si particle suspension includes depositing micro-sized Si particles having a rod shape with a length of about 10 microns and a diameter of about 1 micron, and nano-sized Si particles having a spherical shape with a diameter in a range of 1 to 5 nanometers.

13. In a colloidal-processed silicon (Si) particle memory device, a method for creating a residual current in response to a bias voltage, the method comprising:

providing a memory device including a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing, and a colloidal-processed Si particle layer overlying the first electrode, the second electrode, and the spacing between the electrodes, the Si particle layer including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles;

applying a negative first bias voltage between the first and second electrodes;

subsequent to applying the first bias voltage, applying a zero voltage; and

,

measuring a negative residual current between the first and second electrodes in response to the zero voltage.

14. The method of claim 13 further comprising:

applying a positive second bias voltage between the first and second electrodes;

subsequent to applying the second bias voltage, applying a zero voltage between the first and second electrodes; and

,

measuring a positive residual current between the first and second electrodes, in response to the zero voltage.

15. In a colloidal-processed silicon (Si) particle optoelectrical device, a method for sensing light, the method comprising:

providing a memory device including a substrate, a first electrode overlying the substrate, a second electrode overlying the substrate, laterally adjacent the first electrode, and separated from the first electrode by a spacing, and a colloidal-processed Si particle layer overlying the first electrode, the second electrode, and the spacing between the electrodes, the Si particle layer including a first plurality of nano-sized Si particles and a second plurality of micro-sized Si particles;

supplying a dark ambient illumination environment;

applying a first bias voltage between the first and second electrodes;

measuring a first resistance between the first and second electrodes in response to the dark ambient illumination environment and the first bias voltage;

illuminating the device with light in the spectrum between ultra-violet and visible; and

,

measuring a second resistance, less than the first resistance, in response to the first bias voltage and the light illumination.