NONVOLATILE MEMORY DEVICE OUTPUTTING ANALOG SIGNAL AND MEMORY SYSTEM HAVING THE SAME
First Claim
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1. A memory system comprising:
- a memory device including a plurality of memory cells, the memory device being configured to output a plurality of analog signals from selected memory cells of the plurality of memory cells during a read operation;
a converter configured to convert the plurality of analog signal into binary data; and
a memory controller configured to perform an error correction operation on the binary data.
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Abstract
A memory system and a nonvolatile memory device therein are disclosed. The memory system comprises a memory device outputting a plurality of analog signals during a read operation, a converter to convert the plurality of analog signals into binary data, and a memory controller to operate an error correction operation on the binary data. The error correction operation uses a soft decision algorithm.
27 Citations
17 Claims
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1. A memory system comprising:
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a memory device including a plurality of memory cells, the memory device being configured to output a plurality of analog signals from selected memory cells of the plurality of memory cells during a read operation; a converter configured to convert the plurality of analog signal into binary data; and a memory controller configured to perform an error correction operation on the binary data. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A nonvolatile memory device, comprising:
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a memory cell array including a plurality of memory cells; an analog output circuit configured to output a plurality of analog signals detected on bit lines coupled to selected memory cells from among the plurality of memory cells during a read operation; a voltage generator configured to generate an analog read voltage for the read operation; and a control logic configured to control the voltage generator to supply the analog read voltage to the selected memory cells, and configured to control the analog output circuit to output the plurality of analog signals externally. - View Dependent Claims (11, 12, 13)
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14. A nonvolatile memory device, comprising:
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a memory cell array including a plurality of memory cells; a voltage generator configured to generate an analog read voltage; an analog output circuit configured to output a plurality of analog signals detected on bit lines coupled to selected memory cells from among the plurality of memory cells during a read operation, each of the plurality of analog signals being based on the analog read voltage and a threshold voltage of each corresponding memory cell of the selected memory cells; and a converter configured to convert the plurality of analog signals to binary data by performing a comparison based on each of the plurality of analog signals and the analog read voltage. - View Dependent Claims (15, 16, 17)
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Specification