Large area deposition of graphene via hetero-epitaxial growth, and products including the same
First Claim
1. A method of making a graphene thin film, the method comprising:
- providing a back support substrate;
disposing a catalyst thin film, directly or indirectly, on the back support substrate;
introducing a hydrocarbon inclusive gas proximate to the catalyst thin film;
heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and
rapidly cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film.
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Accused Products
Abstract
Certain example embodiments of this invention relate to the use of graphene as a transparent conductive coating (TCC). In certain example embodiments, graphene thin films grown on large areas hetero-epitaxially, e.g., on a catalyst thin film, from a hydrocarbon gas (such as, for example, C2H2, CH4, or the like). The graphene thin films of certain example embodiments may be doped or undoped. In certain example embodiments, graphene thin films, once formed, may be lifted off of their carrier substrates and transferred to receiving substrates, e.g., for inclusion in an intermediate or final product. Graphene grown, lifted, and transferred in this way may exhibit low sheet resistances (e.g., less than 150 ohms/square and lower when doped) and high transmission values (e.g., at least in the visible and infrared spectra).
132 Citations
20 Claims
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1. A method of making a graphene thin film, the method comprising:
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providing a back support substrate; disposing a catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the catalyst thin film; heating the back support substrate to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas and promote graphene growth in and/or on the catalyst thin film; and rapidly cooling the back support substrate to promote crystallization of graphene, directly or indirectly, on an outermost surface of the catalyst thin film, in making the graphene thin film. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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16. A method of hetero-epitaxially growing a graphene thin film, the method comprising:
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providing a back support; disposing a metal catalyst thin film, directly or indirectly, on the back support substrate; introducing a hydrocarbon inclusive gas proximate to the metal catalyst thin film at a pressure of 5-150 mTorr; heating the back support substrate to a temperature greater than about 700 degrees C. to cause the hydrocarbon inclusive gas to at least partially separate the carbon in the hydrocarbon inclusive gas; growing graphite on the metal catalyst thin film; etching the metal catalyst thin film to form graphane using hydrogen atoms; and further etching the graphane to form graphene using hydrogen atoms. - View Dependent Claims (17, 18)
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19. A graphene thin film hetero-epitaxially grown, directly or indirectly, on a metal catalyst thin film having a substantially single-orientation large-grain crystal structure,
wherein the graphene thin film is 1-10 atomic layers thick.
Specification