METHOD FOR FORMING A TEXTURED SURFACE ON A SEMICONDUCTOR SUBSTRATE USING A NANOFABRIC LAYER

• US 20110034008A1
• Filed: 08/07/2009
• Published: 02/10/2011
• Est. Priority Date: 08/07/2009
• Status: Abandoned Application

• Current Assignee: Nantero Incorporated
• Original Assignee: Nantero Incorporated
• Inventors: Kianian, Sohrab
• Application Number:
  US12/537,510
• Publication Number:
  US 20110034008A1
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials

Abstract

A method of forming a textured surface on a substrate or material layer within a semiconductor fabrication process. In one aspect of the disclosure, a sacrificial nanofabric layer is deposited over a material layer and an etch process is used to transfer the surface texture of the nanofabric layer downward to the material layer. In another aspect of the disclosure, a thin material layer is deposited over a nanofabric layer such that the surface texture of the nanofabric layer is transferred upward to the material layer. Within both aspects, varying the porosity of nanofabric layer provides a measure of control over the degree of texturization of the material layer.

Claims

1. A method for fabricating a textured surface on a material layer within a semiconductor fabrication process, said method comprising:

forming a material layer, said material layer including a surface to be textured;

depositing a sacrificial nanofabric layer on said surface to be textured of said material layer, said nanofabric layer having a porosity, a thickness, and a volume density; and

performing at least one of an etching process and an oxidation process on said sacrificial nanofabric layer to create surface texture on said material layer.

2. The method of claim 1 wherein said nanofabric layer comprises a matted layer of carbon nanotubes.

3. The method of claim 1, wherein said nanofabric layer comprises a monolayer of non-overlapping carbon nanotubes.

4. The method of claim 1, wherein said nanofabric layer comprises a plurality of carbon nanoparticles.

5. The method of claim 1, wherein said nanofabric layer comprises a mixture of carbon nanotubes and inert filler particles.

6. The method of claim 1, wherein said porosity of said nanofabric layer is selected to realize a desired degree of surface texturization on said material layer.

7. The method of claim 6, wherein said volume density of said nanofabric layer is selected to realize a desired porosity within said nanofabric layer.

8. The method of claim 6, wherein said thickness of said nanofabric layer is selected to realize a desired porosity within said nanofabric layer.

9. The method of claim 6, wherein said thickness of said nanofabric layer ranges from about 10 nm to about 500 nm.

10. The method of claim 6, wherein said material layer is selected from the group consisting of a semiconductor, a metal, and an insulator.

11. The method of claim 6 comprising removing the remainder of said sacrificial nanofabric layer after said performing step.

12. A method for fabricating a textured surface on a material layer within a semiconductor fabrication process, said method comprising:

forming a nanofabric layer on a surface, said nanofabric layer having a porosity, a thickness, a volume density, and a surface texture; and

depositing a thin material layer on said nanofabric layer, said thin material layer conforming to the surface texture of said nanofabric layer.

13. The method of claim 12, wherein said nanofabric layer comprises a matted layer of carbon nanotubes.

14. The method of claim 12, wherein said nanofabric layer comprises a monolayer of non-overlapping carbon nanotubes.

15. The method of claim 12, wherein said nanofabric layer comprises a plurality of carbon nanoparticles.

16. The method of claim 12, wherein said nanofabric layer comprises a mixture of carbon nanotubes and inert filler particles.

17. The method of claim 12, wherein the porosity of said nanofabric layer is selected to realize a desired degree of texturization in said material layer.

18. The method of claim 17, wherein said volume density of the nanofabric layer is selected to realize a desired porosity within said nanofabric layer.

19. The method of claim 17 wherein said thickness of the nanofabric layer is selected to realize a desired porosity within said nanofabric layer.

20. The method of claim 12, wherein said material layer is selected from the group consisting of a semiconductor, a metal, and an insulator.