SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND RADIO FREQUENCY MODULE

• US 20110034137A1
• Filed: 10/22/2010
• Published: 02/10/2011
• Est. Priority Date: 06/29/2006
• Status: Active Grant

• Current Assignee: Murata Manufacturing Co Limited
• Original Assignee: Renesas Electronics Corporation
• Inventors: OGAWA, Takashi, ISHIKAWA, Tomoyuki, NAKAJIMA, Akishige, OSAKABE, Shinya, SHIGENO, Yasushi, TAKATANI, Shinnichirou
• Granted Patent: US 8,824,974 B2
• Time in Patent Office: Days
• US Class Current: 455/127.1
• CPC Class Codes: H01L 27/0641 without components of the field effect type
• CPC Class Codes: H03K 17/005 with several inputs only
• CPC Class Codes: H03K 17/007 with several outputs only
• CPC Class Codes: H03K 17/063 in field-effect transistor switches
• CPC Class Codes: H03K 17/161 in field-effect transistor switches
• CPC Class Codes: H03K 17/302 in field-effect transistor switches
• CPC Class Codes: H03K 17/6871 the output circuit comprising more than one controlled field-effect transistor
• CPC Class Codes: H03K 17/693 Switching arrangements with several input- or output-terminals, e.g. multiplexers, distributors logic circuits H03K19/00; code converters H03M5/00, H03M7/00
• CPC Class Codes: H03K 17/72 having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
• CPC Class Codes: H03K 2017/066 Maximizing the OFF-resistance instead of minimizing the ON-resistance
• CPC Class Codes: H03K 2217/0018 Special modifications or use of the back gate voltage of a FET
• CPC Class Codes: H04B 1/006 using switches for selecting the desired band H04B1/0057 takes precedence

Abstract

The present invention provides a semiconductor integrated circuit device and a radio frequency module realizing reduction in high-order harmonic distortion or IMD. For example, a so-called antenna switch having a plurality of transistors between an antenna terminal and a plurality of signal terminals is provided with a voltage supply circuit. The voltage supply circuit is a circuit for supplying voltage from a voltage supply terminal to at least two signal terminals in the plurality of signal terminals via resistive elements. With the configuration, antenna voltage dropped due to a leakage or the like can be boosted and, for example, transistors in an off state can be set to a deep off state.

Claims

1. A high frequency power amplifier module comprising:

an antenna having an antenna node;

an antenna switch coupled to the antenna; and

a power amplifier circuit for transmitting a radio frequency signal, coupled to the antenna switch,

wherein the antenna switch comprising;

a voltage supply node to which bias voltage is applied;

a plurality of signal nodes;

a plurality of transistors coupled between the plurality of signal nodes and the antenna node and switching coupling/decoupling between the plurality of signal nodes and the antenna node;

a plurality of first resistive elements connected between drains and sources of the each transistors; and

a plurality of second resistive elements each coupled between two or more signal nodes in the plurality of signal nodes and the voltage supply node.

2. The high frequency power amplifier module according to claim 1,

wherein the number of the resistive elements is two, and each of the resistive elements is coupled between the two signal nodes out of the plurality of signal nodes and the voltage supply node.

3. The high frequency power amplifier module according to claim 1,

wherein the resistance value of each of the resistive elements is 100 kQ to 200 kQ.

4. The high frequency power amplifier module according to claim 1,

wherein each of the plurality of transistors is constructed by transistor elements in a plurality of stages coupled in series.

5. The high frequency power amplifier module according to claim 1,

wherein the transistors are HEMTs.

6. The high frequency power amplifier module according to claim 2,

wherein the two signal nodes out of the plurality of signal nodes are reception nodes.

7. A radio frequency module comprising:

an antenna having an antenna node;

an antenna switch coupled to the antenna; and

a power amplifier circuit for transmitting a radio frequency signal, coupled to the antenna switch,

wherein the antenna switch comprising;

a voltage supply node to which bias voltage is applied;

a plurality of transmission/reception nodes for transmission/reception signals of a plurality of communication methods;

a plurality of reception nodes for reception signals of the plurality of communication methods;

a common node;

a plurality of transmission/reception transistors each coupled between the transmission/reception nodes and the antenna node and switching coupling/decoupling between the transmission/reception nodes and the antenna node;

a common transistor coupled between the antenna node and the common node and switching coupling/decoupling between the antenna node and the common node;

a plurality of reception transistors each coupled between the reception nodes and the common node and switching coupling/decoupling between the reception nodes and the common node;

a plurality of first resistive elements connected between drains and sources of the each transmission/reception transistors;

a plurality of second resistive elements connected between drain and source of the common transistor;

a plurality of third resistive elements connected between drains and sources of the each reception transistors;

a fourth resistive element coupled between a first node as one of the transmission/reception nodes and the voltage supply node; and

a fifth resistive element coupled between the common node and the voltage supply node.

8. The radio frequency module according to claim 7,

wherein the communication modes include a W-CDMA method using a low frequency band and a W-CDMA method using a frequency band higher than the low frequency band, and

wherein the first node is conformed with the W-CDMA method using the low frequency band.

9. The radio frequency module according to claim 8,

wherein the resistance value of each of the fourth and fifth resistive elements is 100 kQ to 150 kQ.

10. The radio frequency module according to claim 7,

wherein each of the transmission/reception transistors and the common transistor is constructed by triple-gate transistor elements in two stages coupled in series.

11. The radio frequency module according to claim 7,

wherein the transmission/reception transistors and the common transistor are HEMTs.