Semiconductor Wafer Carrier and Method of Manufacturing

• US 20110035937A1
• Filed: 07/21/2010
• Published: 02/17/2011
• Est. Priority Date: 08/14/2009
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Lu, Yung-Jean, Chen, Ming-Fa, Huang, Jao Sheng, Chen, Chen-Shien
• Granted Patent: US 8,859,424 B2
• Time in Patent Office: Days
• US Class Current: 29/829
• CPC Class Codes: H01L 21/6833 Details of electrostatic chucks
• CPC Class Codes: Y10T 29/49124 On flat or curved insulated base, e.g., printed circuit, etc.

Abstract

A system and method for a semiconductor wafer carrier is disclosed. An embodiment comprises a semiconductor wafer carrier wherein conductive dopants are implanted into the carrier in order to amplify the coulombic forces between an electrostatic chuck and the carrier to compensate for reduced forces that result from thinner semiconductor wafers. Another embodiment forms conductive layers and vias within the carrier instead of implanting conductive dopants.

Claims

1. A method of forming a semiconductor device comprising:

providing a semiconductor wafer comprising a substrate and one or more through-substrate vias extending into a part of the substrate;

providing a carrier comprising one or more ionic dopants; and

attaching the semiconductor wafer to the carrier.

2. The method of claim 1, wherein the one or more ionic dopants comprises sodium.

3. The method of claim 1, wherein the one or more ionic dopants comprises potassium.

4. The method of claim 1, wherein the one or more ionic dopants comprises sodium and boron.

5. The method of claim 1, wherein a concentration of the one or more ionic dopants is greater than 5×

10¹⁴ cm<sup>−

1</sup>.

6. The method of claim 1, wherein the providing a carrier further comprises:

providing a carrier free of ionic dopants; and

doping the carrier with the one or more ionic dopants.

7. The method of claim 1, wherein the one or more through-substrate vias comprise copper.

8. The method of claim 1, wherein the carrier comprises glass.

9. The method of claim 1, wherein the carrier comprises a silicon base material.

17. The method of claim 8, wherein the carrier comprises glass.

10. A method of forming a semiconductor device comprising:

providing a semiconductor wafer comprising a substrate and one or more through-substrate vias extending into a part of the substrate;

providing a carrier comprising one or more conductive vias; and

attaching the semiconductor wafer to the carrier.

11. The method of claim 10, wherein the one or more conductive vias comprise a conductive organic material.

12. The method of claim 10, wherein the carrier further comprises:

a dielectric material filling the space between the one or more conductive vias; and

a first conductive layer in contact with a first surface of the dielectric material.

13. The method of claim 12, further comprising a second conductive layer in contact with a second surface of the dielectric material, the second surface being opposite the first surface of the dielectric material.

14. The method of claim 10, wherein the one or more conductive vias comprise aluminum oxide.

15. The method of claim 10, further comprising:

placing the carrier adjacent to an electrostatic chuck, the electrostatic chuck comprising an electrode; and

applying a first voltage to the electrode.

16. The method of claim 10, wherein the one or more through-substrate via comprises copper.

18. A method of manufacturing a semiconductor device, the method comprising:

providing a carrier, the carrier comprising a first substrate and one or more ionic dopants located within the first substrate;

attaching the carrier to a first side of a semiconductor wafer, the semiconductor wafer comprising a semiconductor substrate and at least one conductive via extending into the semiconductor substrate.

19. The method of claim 18, wherein the one or more ionic dopants comprises sodium.

20. The method of claim 18, wherein the one or more ionic dopants comprises potassium.