SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A method for manufacturing a semiconductor device comprising the steps of:
- forming a gate electrode layer;
forming a gate insulating layer over the gate electrode layer;
forming a metal thin film over the gate insulating layer;
forming an oxide semiconductor layer over the metal thin film;
heating the metal thin film and the oxide semiconductor layer wherein the metal thin film is oxidized at least partly;
forming an oxide insulating layer in contact with a part of the oxide semiconductor layer and covering a peripheral portion and a side surface of the oxide semiconductor layer; and
forming a source electrode layer and a drain electrode layer over the oxide insulating layer.
1 Assignment
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Accused Products
Abstract
One object is to provide a semiconductor device with a structure which enables reduction in parasitic capacitance sufficiently between wirings. In a bottom-gate type thin film transistor including a stacked layer of a first layer which is a metal thin film oxidized partly or entirely and an oxide semiconductor layer, the following oxide insulating layers are formed together: an oxide insulating layer serving as a channel protective layer which is over and in contact with a part of the oxide semiconductor layer overlapping with a gate electrode layer; and an oxide insulating layer which covers a peripheral portion and a side surface of the stacked oxide semiconductor layer.
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Citations
24 Claims
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1. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming a metal thin film over the gate insulating layer; forming an oxide semiconductor layer over the metal thin film; heating the metal thin film and the oxide semiconductor layer wherein the metal thin film is oxidized at least partly; forming an oxide insulating layer in contact with a part of the oxide semiconductor layer and covering a peripheral portion and a side surface of the oxide semiconductor layer; and forming a source electrode layer and a drain electrode layer over the oxide insulating layer. - View Dependent Claims (2, 3, 7, 8, 9, 10, 11, 12, 13, 14)
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4. A method for manufacturing a semiconductor device comprising the steps of:
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forming a gate electrode layer; forming a gate insulating layer over the gate electrode layer; forming a metal thin film over the gate insulating layer; forming an oxide semiconductor layer over the metal thin film; dehydrating or dehydrogenating the oxide semiconductor layer and oxidizing the metal thin film, forming an oxide insulating layer which is in contact with a part of the oxide semiconductor layer and covers a peripheral portion and a side surface of the oxide semiconductor layer; forming a source electrode layer and a drain electrode layer over the oxide insulating layer; and forming a protective insulating layer which is in contact with the oxide insulating layer, the source electrode layer, the drain electrode layer, and the oxide semiconductor layer. - View Dependent Claims (5, 6)
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15. A semiconductor device comprising:
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a first transistor comprising; a stacked layer including a first oxide semiconductor layer and a second oxide semiconductor layer, the stacked layer overlapped with a first gate electrode layer with a first gate insulating layer interposed therebetween; and a second transistor comprising; a third oxide semiconductor layer overlapped with a second gate electrode layer with a second gate insulating layer interposed therebetween, wherein an oxide insulating layer covers and be in contact with a peripheral portion and a side surface of the stacked layer, and wherein a source electrode layer and a drain electrode layer which are electrically connected to the second oxide semiconductor layer are provided over the oxide insulating layer. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24)
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Specification