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Shielded gate trench MOSFET device and fabrication

  • US 20110037120A1
  • Filed: 08/14/2009
  • Published: 02/17/2011
  • Est. Priority Date: 08/14/2009
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a substrate;

    an active gate trench in the substrate; and

    an asymmetric trench in the substrate;

    wherein;

    the asymmetric trench has a first trench wall and a second trench wall;

    the first trench wall is lined with oxide having a first thickness; and

    the second trench wall is lined with oxide having a second thickness that is different from the first thickness.

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