Shielded gate trench MOSFET device and fabrication
First Claim
1. A semiconductor device, comprising:
- a substrate;
an active gate trench in the substrate; and
an asymmetric trench in the substrate;
wherein;
the asymmetric trench has a first trench wall and a second trench wall;
the first trench wall is lined with oxide having a first thickness; and
the second trench wall is lined with oxide having a second thickness that is different from the first thickness.
2 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device embodiment includes a substrate, an active gate trench in the substrate, and an asymmetric trench in the substrate. The asymmetric trench has a first trench wall and a second trench wall, the first trench wall is lined with oxide having a first thickness, and the second trench wall is lined with oxide having a second thickness that is different from the first thickness. Another semiconductor device embodiment includes a substrate, an active gate trench in the substrate; and a source polysilicon pickup trench in the substrate. The source polysilicon pickup trench includes a polysilicon electrode, and top surface of the polysilicon electrode is below a bottom of a body region. Another semiconductor device includes a substrate, an active gate trench in the substrate, the active gate trench has a first top gate electrode and a first bottom source electrode, and a gate runner trench comprising a second top gate electrode and a second bottom source electrode. The second top gate electrode is narrower than the second bottom source electrode.
69 Citations
33 Claims
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1. A semiconductor device, comprising:
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a substrate; an active gate trench in the substrate; and an asymmetric trench in the substrate;
wherein;the asymmetric trench has a first trench wall and a second trench wall; the first trench wall is lined with oxide having a first thickness; and the second trench wall is lined with oxide having a second thickness that is different from the first thickness. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
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15. A semiconductor device, comprising:
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is a substrate; an active gate trench in the substrate; and a source polysilicon pickup trench in the substrate;
wherein;the source polysilicon pickup trench includes a polysilicon electrode; and top surface of the polysilicon electrode is below a bottom of a body region. - View Dependent Claims (16, 17, 18, 19)
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20. A semiconductor device, comprising:
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a substrate; an active gate trench in the substrate, comprising a first top gate electrode and a first bottom source electrode; and a gate runner trench comprising a second top gate electrode and a second bottom source electrode;
wherein;the second top gate electrode is narrower than the second bottom source electrode. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33)
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Specification