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Semiconductor Device having variable parameter selection based on temperature and test method

  • US 20110037138A1
  • Filed: 08/13/2009
  • Published: 02/17/2011
  • Est. Priority Date: 04/19/2006
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first temperature sensing circuit including a first temperature threshold value and providing a first temperature indication signal, the first temperature sensing circuit coupled to receive a temperature detect enable signal having a temperature detect enable logic level and a temperature detect disable logic level, the first temperature sensing circuit being disabled when the temperature detect enable signal has the temperature detect disable logic level; and

    a first latch coupled to receive the first temperature indication signal and providing a latched first temperature indication signal, the first latch is coupled to receive a latch enable signal having a latch enable logic level and a latch disable logic level and the first latch outputs a previously detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch disable logic level and outputs a currently detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch enable logic levelwherein the latch enable signal transitions to a latch enable logic level a time delay after the temperature detect signal transitions to a temperature detect enable logic level.

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