Semiconductor Device having variable parameter selection based on temperature and test method
First Claim
1. A semiconductor device, comprising:
- a first temperature sensing circuit including a first temperature threshold value and providing a first temperature indication signal, the first temperature sensing circuit coupled to receive a temperature detect enable signal having a temperature detect enable logic level and a temperature detect disable logic level, the first temperature sensing circuit being disabled when the temperature detect enable signal has the temperature detect disable logic level; and
a first latch coupled to receive the first temperature indication signal and providing a latched first temperature indication signal, the first latch is coupled to receive a latch enable signal having a latch enable logic level and a latch disable logic level and the first latch outputs a previously detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch disable logic level and outputs a currently detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch enable logic levelwherein the latch enable signal transitions to a latch enable logic level a time delay after the temperature detect signal transitions to a temperature detect enable logic level.
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Abstract
A semiconductor device that may include temperature sensing circuits is disclosed. The temperature sensing circuits may be used to control various parameters, such as internal regulated supply voltages, internal refresh frequency, or a word line low voltage. In this way, operating specifications of a semiconductor device at worst case temperatures may be met without compromising performance at normal operating temperatures. Each temperature sensing circuit may include a selectable temperature threshold value as well as a selectable temperature hysteresis value. In this way, temperature performance characteristics may be finely tuned. Furthermore, a method of testing the temperature sensing circuits is disclosed in which a current value may be monitored and temperature threshold values and temperature hysteresis values may be thereby determined.
77 Citations
20 Claims
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1. A semiconductor device, comprising:
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a first temperature sensing circuit including a first temperature threshold value and providing a first temperature indication signal, the first temperature sensing circuit coupled to receive a temperature detect enable signal having a temperature detect enable logic level and a temperature detect disable logic level, the first temperature sensing circuit being disabled when the temperature detect enable signal has the temperature detect disable logic level; and a first latch coupled to receive the first temperature indication signal and providing a latched first temperature indication signal, the first latch is coupled to receive a latch enable signal having a latch enable logic level and a latch disable logic level and the first latch outputs a previously detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch disable logic level and outputs a currently detected first temperature indication signal value as the latched first temperature indication signal when the latch enable signal is in the latch enable logic level wherein the latch enable signal transitions to a latch enable logic level a time delay after the temperature detect signal transitions to a temperature detect enable logic level. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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Specification